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US 6,849,466 B2Granted
Method for manufacturing MTJ cell of magnetic random access memory
AssigneeHynix Semiconductor Inc.
InventorSeaung Suk Lee
Life of this patent
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Abstract
A method for fabricating a MTJ cell of a magnetic random access memory (MRAM) using a semiconductor film as a tunnel barrier layer is disclosed. The method comprises the steps of: forming a pinned ferromagnetic layer on a connection layer; forming a tunnel barrier layer using a semiconductor film on the pinned ferromagnetic layer; and forming a free ferromagnetic layer on the tunnel barrier layer.
Claims14
A method for fabricating a MTJ cell of a MRAM, comprising the steps of:
- forming a pinned ferromagnetic layer on a connection layer;
- forming a tunnel barrier layer on the pinned ferromagnetic layer using a semiconductor film that is a pure Group IV semiconductor film;
- and
- forming a free ferromagnetic layer on the tunnel barrier layer.
1 more element
A method for fabricating a MTJ cell of a MRAM, comprising the steps of:
- forming a pinned ferromagnetic layer on a connection layer;
- forming a tunnel barrier layer on the pinned ferromagnetic layer using a semiconductor film, wherein the semiconductor film is a Group IV semiconductor film having Group III elements added thereto;
- and
- forming a free ferromagnetic layer on the tunnel barrier layer.
1 more element
A method for fabricating a MTJ cell of a MRAM, comprising the steps of:
- forming a pinned ferromagnetic layer on a connection layer;
- forming a tunnel barrier layer on the pinned ferromagnetic layer using a semiconductor film, wherein the semiconductor film is a Group IV semiconductor film having Group V elements added thereto;
- and
- forming a free ferromagnetic layer on the tunnel barrier layer.
1 more element
Dependencies are inferred from the claim text.