Method for in situ growth of p-type doped group II-VI semiconductor films
AssigneeHughes Electronics Corporation
InventorsOwen K. Wu, Rajesh D. Rajavel
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Abstract
A method of growing a p-type doped Group II-VI semiconductor film includes the steps of forming a lattice comprising a Group II material and a Group VI material wherein a cation-rich condition is established at a surface of the lattice. The method further includes the steps of generating an elemental Group V flux by evaporating an elemental Group V material and providing the elemental Group V flux to a Group VI sublattice of the lattice.
Claims20
A method of growing a p-type doped Group II-VI semiconductor film, comprising the steps of:
- (a) forming a lattice comprising mercury and a Group VI material wherein a cation-rich condition is established at a surface of the lattice;
- (b) generating an elemental Group V flux by evaporating an elemental Group V material;
- and
- (c) providing the elemental Group V flux to the surface of the lattice to grow the lattice with the elemental Group V material incorporated therein.
A method of fabricating a p-type doped Group II-VI semiconductor layer, comprising the steps of:
- (a) growing a lattice comprising mercury and a Group VI material wherein a cation-rich condition is established at a surface of the lattice;
- (b) generating a dopant flux consisting essentially of elemental arsenic;
- and
- (c) providing the elemental arsenic in the dopant flux to the surface of the lattice to grow the lattice with the elemental arsenic incorporated therein.
A method of fabricating a p-type doped HgCdTe semiconductor film, comprising the steps of:
- (a) generating a first flux comprising mercury and a second flux comprising tellurium according to a predetermined Hg:Te flux ratio;
- (b) generating an elemental Group V flux;
- and
- (c) providing the elemental Group V flux, the first flux and the second flux to a substrate to grow a lattice thereon;
- wherein the Hg:Te flux ratio is in a range from about 125 to about 1000 to direct the elemental Group V flux to a Group VI sublattice of the lattice.
Dependencies are inferred from the claim text.