Y10S 438/957
Making metal-insulator-metal device
Y10S438/957 (Making metal-insulator-metal device) appears on 201 US grants and 133 published applications in this corpus.
Search patents in Y10S- Granted patents
- 201
- Published applications
- 133
- Assignees
- 80
- Inventors
- 325
- Latest grant
- 15 Sep 2015
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1986 | 2 | 0 |
| 1987 | 6 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 2 | 0 |
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 6 | 0 |
| 2000 | 6 | 0 |
| 2001 | 12 | 1 |
| 2002 | 15 | 16 |
| 2003 | 18 | 18 |
| 2004 | 18 | 15 |
| 2005 | 17 | 14 |
| 2006 | 17 | 14 |
| 2007 | 13 | 7 |
| 2008 | 14 | 15 |
| 2009 | 6 | 10 |
| 2010 | 12 | 6 |
| 2011 | 12 | 6 |
| 2012 | 7 | 4 |
| 2013 | 6 | 5 |
| 2014 | 2 | 1 |
| 2015 | 5 | 0 |
| 2016 | 0 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Precision high-frequency capacitor formed on semiconductor substrate15 Sep 2015US 9,136,060 B2Vishay-Siliconix
- Memory cells having storage elements that share material layers with steering elements and methods of forming the same17 Mar 2015US 8,981,331 B2SanDisk 3D LLC
- Memory cells having storage elements that share material layers with steering elements and methods of forming the same3 Mar 2015US 8,969,845 B2SanDisk 3D LLC
- Select devices including an open volume, and related methods, memory devices, and electronic systems17 Feb 2015US 8,957,403 B2Micron Technology, Inc.
- Laminate stacked capacitor, circuit substrate with laminate stacked capacitor and semiconductor apparatus with laminate stacked capacitor17 Feb 2015US 8,957,499 B2Fujitsu Limited
- Fabrication of channel wraparound gate structure for field-effect transistor20 Oct 2016US 2016/0308014 A1
- Memory cells having storage elements that share material layers with steering elements and methods of forming the same25 Sep 2014US 2014/0284538 A1SanDisk 3D LLC
- Reliable contacts19 Dec 2013US 2013/0334616 A1GLOBALFOUNDRIER Singapore Pte. Ltd.
- Select devices including an open volume, and related methods, memory devices, and electronic systems31 Oct 2013US 2013/0285110 A1Micron Technology, Inc.
- Low leakage mim capacitor31 Oct 2013US 2013/0285206 A1Micron Technology, Inc.
Most cited
By later US patents
- Memory cell comprising a semiconductor junction diode crystallized adjacent to a silicide180US 7,176,064 B2SanDisk 3D LLC · 2007
- Metal gate transistors with epitaxial source and drain regions132US 7,332,439 B2Intel Corporation · 2008
- Semiconductor device having a chip size package including a passive element124US 6,639,299 B2Casio Computer Co., Ltd. · 2003
- Configurable nanoscale crossbar electronic circuits made by electrochemical reaction117US 6,518,156 B1Hewlett-Packard Company · 2003
- Methods for fabricating flexible circuit structures99US 6,391,220 B1Fujitsu Limited · 2002