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US 8,957,403 B2Granted
Select devices including an open volume, and related methods, memory devices, and electronic systems
AssigneeMicron Technology, Inc.
InventorsBhaskar Srinivasan, Gurtej S. Sandhu
Life of this patent
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Abstract
Select devices including an open volume that functions as a high bandgap material having a low dielectric constant are disclosed. The open volume may provide a more nonlinear, asymmetric I-V curve and enhanced rectifying behavior in the select devices. The select devices may comprise, for example, a metal-insulator-insulator-metal (MIIM) diode. Various methods may be used to form select devices and memory systems including such select devices. Memory devices and electronic systems include such select devices.
Claims20
A method of forming a select device, comprising:
- forming at least one structure comprising:
- a dielectric material on a surface of a conductive material;
- nanodots dispersed within the dielectric material, each of the nanodots spaced apart from each other of the nanodots within the dielectric material;
- another dielectric material overlying the dielectric material;
- and
- another conductive material overlying the another dielectric material;
- removing at least a portion of the dielectric material selective to the nanodots to form an open volume between opposing surfaces of the dielectric material and the conductive material;
- and
- forming opposing spacers on the surface of the conductive material and on sidewalls of the another conductive material and the another dielectric material such that the open volume is at least partially defined by the surface of the conductive material, an opposing surface of the another dielectric material, surfaces of the nanodots, and inner sidewalls of the opposing spacers substantially coplanar with the sidewalls of the another dielectric material and the another conductive material.
6 more elements
A select device comprising:
- nanodots on a surface of a conductive material, each of the nanodots spaced apart from each other of the nanodots;
- a dielectric material overlying the nanodots;
- another conductive material overlying the dielectric material;
- and
- an open volume at least partially defined by the surface of the conductive material, an opposing surface of the dielectric material, surfaces of the nanodots, and inner sidewalls of opposing spacers substantially coplanar with sidewalls of the dielectric material and the another conductive material.
2 more elements
An electronic system comprising:
- at least one electronic signal processor;
- at least one memory device configured to communicate electrically with the at least one electronic signal processor, the at least one memory device comprising:
- at least one select device comprising:
- a conductive material;
- nanodots on a surface of the conductive material, each of the nanodots spaced apart from each other of the nanodots;
- a dielectric material over the nanodots;
- another conductive material over the dielectric material;
- and
- an open volume at least partially defined by the surface of the conductive material, an opposing surface of the dielectric material, surfaces of the nanodots, and inner sidewalls of opposing spacers substantially coplanar with sidewalls of the dielectric material and the another conductive material;
- and
- at least one of an input device and an output device configured to communicate electrically with the at least one electronic signal processor.
8 more elements
A memory device comprising:
- at least one memory element;
- a plurality of bit lines;
- at least one wordline;
- and
- at least one select device comprising:
- a conductive material;
- nanodots on a surface of the conductive material, each of the nanodots spaced apart from each other of the nanodots;
- a dielectric material over the nanodots;
- another conductive material over the dielectric material;
- and
- an open volume at least partially defined by the surface of the conductive material, an opposing surface of the dielectric material, surfaces of the nanodots, and inner sidewalls of opposing spacers substantially coplanar with sidewalls of the dielectric material and the another conductive material.
8 more elements
Dependencies are inferred from the claim text.