Y10S 117/915
Separating from substrate
Y10S117/915 (Separating from substrate) appears on 181 US grants and 69 published applications in this corpus.
Search patents in Y10S- Granted patents
- 181
- Published applications
- 69
- Assignees
- 91
- Inventors
- 248
- Latest grant
- 25 Dec 2018
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 0 | 0 |
| 1978 | 4 | 0 |
| 1979 | 2 | 0 |
| 1980 | 3 | 0 |
| 1981 | 6 | 0 |
| 1982 | 7 | 0 |
| 1983 | 2 | 0 |
| 1984 | 4 | 0 |
| 1985 | 4 | 0 |
| 1986 | 3 | 0 |
| 1987 | 4 | 0 |
| 1988 | 3 | 0 |
| 1989 | 4 | 0 |
| 1990 | 2 | 0 |
| 1991 | 2 | 0 |
| 1992 | 1 | 0 |
| 1993 | 8 | 0 |
| 1994 | 8 | 0 |
| 1995 | 2 | 0 |
| 1996 | 3 | 0 |
| 1997 | 5 | 0 |
| 1998 | 4 | 0 |
| 1999 | 4 | 0 |
| 2000 | 15 | 0 |
| 2001 | 9 | 5 |
| 2002 | 5 | 12 |
| 2003 | 15 | 3 |
| 2004 | 5 | 1 |
| 2005 | 3 | 8 |
| 2006 | 0 | 5 |
| 2007 | 5 | 6 |
| 2008 | 5 | 7 |
| 2009 | 4 | 7 |
| 2010 | 7 | 3 |
| 2011 | 7 | 5 |
| 2012 | 2 | 1 |
| 2013 | 0 | 1 |
| 2014 | 4 | 1 |
| 2015 | 3 | 1 |
| 2016 | 1 | 1 |
| 2017 | 0 | 0 |
| 2018 | 2 | 1 |
| 2019 | 0 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Bond and release layer transfer process25 Dec 2018US 10,164,144 B2QMAT, Inc.
- Bond and release layer transfer process2 Jan 2018US 9,859,458 B2QMAT, Inc.
- Process for producing layered member and layered member30 Aug 2016US 9,431,570 B2Hamamatsu Photonics K.K.
- Controlled process and resulting device13 Oct 2015US 9,159,605 B2Silicon Genesis Corporation
- Method for producing III-N layers, and III-N layers or III-N substrates, and devices based thereon25 Aug 2015US 9,115,444 B2Freiberger Compound Materials GmbH
- Bond and release layer transfer process4 Apr 2019US 2019/0103507 A1QMAT, Inc.
- Bond and release layer transfer process8 Feb 2018US 2018/0040765 A1QMAT, Inc.
- Bond and release layer transfer process22 Dec 2016US 2016/0372628 A1QMAT, Inc.
- Process for producing layered member and layered member19 Feb 2015US 2015/0050770 A1Hamamatsu Photonics K.K.
- Controlled process and resulting device18 Dec 2014US 2014/0370687 A1Silicon Genesis Corporation
Most cited
By later US patents
- Method for the transfer of thin layers of monocrystalline material to a desirable substrate617US 5,877,070 AMax Planck Society · 1999
- Method of transferring a thin film to an alternate substrate431US 5,391,257 ARockwell International Corporation · 1995
- Controlled cleavage process and device for patterned films426US 5,985,742 ASilicon Genesis Corporation · 1999
- Method of producing sheets of crystalline material345US 4,727,047 AMassachusetts Institute of Technology · 1988
- Controlled cleavage process and device for patterned films344US 6,528,391 B1Silicon Genesis Corporation · 2003