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AssigneesFreiberger Compound Materials GmbH, OSRAM Opto Semiconductors GmbH
InventorsFerdinand Scholz, Peter Brückner, Frank Habel, Matthias Peter, Klaus Köhler
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An epitaxial growth process for producing a thick III-N layer, wherein III denotes at least one element of group III of the periodic table of elements, is disclosed, wherein a thick III-N layer is deposited above a foreign substrate. The epitaxial growth process preferably is carried out by HVPE. The substrate can also be a template comprising the foreign substrate and at least one thin III-N intermediate layer. The surface quality is improved by providing a slight intentional misorientation of the substrate, and/or a reduction of the N/III ratio and/or the reactor pressure towards the end of the epitaxial growth process. Substrates and semiconductor devices with such improved III-N layers are also disclosed.
A substrate comprising a III-N layer, wherein III denotes at least one element of group III of the periodic table of elements, wherein the III-N layer, at least on one side, has an average surface roughness of 50 nm or below over the whole substrate surface wherein said surface roughness is a measure of the III-N layer when not subjected to annealing, polishing and/or etching.
Dependencies are inferred from the claim text.