Controlled process and resulting device
AssigneeSilicon Genesis Corporation
InventorsFrancois J. Henley, Nathan Cheung
Life of this patent
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Abstract
A method for forming a multi-material thin film includes providing a multi-material donor substrate comprising single crystal silicon and an overlying film comprising GaN. Energetic particles are introduced through a surface of the multi-material donor substrate to a selected depth within the single crystal silicon. The method includes providing energy to a selected region of the donor substrate to initiate a controlled cleaving action in the donor substrate. Then, a cleaving action is made using a propagating cleave front to free a multi-material film from a remaining portion of the donor substrate, the multi-material film comprising single crystal silicon and the overlying film.
Claims20
A method comprising:
- providing a multi-material donor substrate comprising single crystal silicon and an overlying film comprising SiC;
- introducing energetic particles through a surface of the multi-material donor substrate to a selected depth within the single crystal silicon;
- providing energy to a selected region of the donor substrate to initiate a controlled cleaving action in the donor substrate;
- and
- making a cleaving action using a propagating cleave front to free a multi-material film from a remaining portion of the donor substrate, the multi-material film comprising single crystal silicon and the overlying film.
Dependencies are inferred from the claim text.