Y10S 117/906
Special atmosphere other than vacuum or inert
Y10S117/906 (Special atmosphere other than vacuum or inert) appears on 115 US grants and 9 published applications in this corpus.
Search patents in Y10S- Granted patents
- 115
- Published applications
- 9
- Assignees
- 65
- Inventors
- 198
- Latest grant
- 20 Mar 2012
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 3 | 0 |
| 1978 | 4 | 0 |
| 1979 | 5 | 0 |
| 1980 | 6 | 0 |
| 1981 | 5 | 0 |
| 1982 | 5 | 0 |
| 1983 | 4 | 0 |
| 1984 | 4 | 0 |
| 1985 | 4 | 0 |
| 1986 | 4 | 0 |
| 1987 | 8 | 0 |
| 1988 | 3 | 0 |
| 1989 | 8 | 0 |
| 1990 | 7 | 0 |
| 1991 | 6 | 0 |
| 1992 | 4 | 0 |
| 1993 | 4 | 0 |
| 1994 | 4 | 0 |
| 1995 | 1 | 0 |
| 1996 | 1 | 0 |
| 1997 | 1 | 0 |
| 1998 | 2 | 0 |
| 1999 | 1 | 0 |
| 2000 | 2 | 0 |
| 2001 | 5 | 1 |
| 2002 | 2 | 2 |
| 2003 | 0 | 1 |
| 2004 | 2 | 1 |
| 2005 | 0 | 1 |
| 2006 | 1 | 2 |
| 2007 | 2 | 0 |
| 2008 | 0 | 0 |
| 2009 | 2 | 1 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 1 | 0 |
By publication year. Applications have been published since 2001.
Subgroups
Granted patents
Recent patents
- One-pot synthesis of high-quality metal chalcogenide nanocrystals without precursor injection20 Mar 2012US 8,137,457 B2University of Florida Research Foundation, Inc.
- Scintillator single crystal and production method of same17 Nov 2009US 7,618,491 B2Hitachi Chemical Company, Ltd.
- Single crystal heat treatment method12 May 2009US 7,531,036 B2Hitachi Chemical Company, Ltd.
- 3-5 group compound semiconductor, process for producing the same, and compound semiconductor element using the same12 Jun 2007US 7,229,493 B2Sumitomo Chemical Company, Limited
- Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient22 May 2007US 7,220,313 B2Cree, Inc.
- One-Pot Synthesis of High-Quality Metal Chalcogenide Nanocrystals Without Precursor Injection2 Apr 2009US 2009/0084307 A1University of Florida Research Foundation, Inc.
- Scintillator single crystal and production method of same28 Dec 2006US 2006/0288926 A1Hitachi Chemical Company, Ltd.
- Single crystal heat treatment method30 Nov 2006US 2006/0266276 A1Hitachi Chemical Company, Ltd.
- Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient3 Feb 2005US 2005/0022727 A1Cree, Inc.
- Manufacturing method of silicon carbide single crystals7 Oct 2004US 2004/0194693 A1Denso Corporation
Most cited
By later US patents
- Method of fabrication of highly resistive GaN bulk crystals87US 6,273,948 B1Centrum Badan Wysokocisnieniowych Polskiej Akademii Nauk · 2001
- Method of annealing a semiconductor wafer in a hydrogen atmosphere to desorb surface contaminants48US 5,508,207 ASumitomo Sitix Corporation · 1996
- Manufacture of cadmium mercury telluride43US 4,650,539 AThe Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Northern Ireland · 1987
- Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film41US 4,888,202 ANippon Telegraph and Telephone Corporation · 1989
- Oxygen precipitation control in czochralski-grown silicon cyrstals40US 5,474,020 ATexas Instruments Incorporated · 1995