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Y10S 117/907

Refluxing atmosphere

Y10S117/907 (Refluxing atmosphere) appears on 20 US grants and 0 published applications in this corpus.

Search patents in Y10S

Granted patents: 20
Published applications: 0
Assignees: 15
Inventors: 38
Latest grant: 14 Aug 2001

Filings by year

Y10S 117/907: granted patents and published applications per publication year
Year	Granted patents	Published applications
1981	1	0
1982	3	0
1983	1	0
1984	1	0
1985	1	0
1986	1	0
1987	2	0
1988	0	0
1989	1	0
1990	0	0
1991	1	0
1992	0	0
1993	1	0
1994	3	0
1995	0	0
1996	0	0
1997	0	0
1998	1	0
1999	1	0
2000	0	0
2001	2	0

By publication year. Applications have been published since 2001.

Recent patents

Method of fabrication of highly resistive GaN bulk crystals14 Aug 2001US 6,273,948 B1Centrum Badan Wysokocisnieniowych Polskiej Akademii Nauk
Apparatus for controlling the oxygen content in silicon wafers heavily doped with antimony or arsenic10 Apr 2001US 6,214,109 B1MEMC Electronic Materials, Inc.
Process for controlling the oxygen content in silicon wafers heavily doped with antimony or arsenic18 May 1999US 5,904,768 AMEMC Electronic Materials, Inc.
Method and apparatus for formation of HgCdTe infrared detection layers employing isothermal crystal growth8 Dec 1998US 5,846,319 AAmber Engineering, Inc.
High pressure liquid phase epitaxy reactor chamber with direct see through capability27 Dec 1994US 5,375,557 ATexas Instruments Incorporated

Most cited

By later US patents