Process for controlling the oxygen content in silicon wafers heavily doped with antimony or arsenic

A process for controlling oxygen content in a single crystal silicon rod which is pulled from a silicon melt containing antimony or arsenic as a dopant in accordance with Czochralski method, the silicon melt being contained within a hermetically sealed chamber of a crystal puller wherein an atmosphere is maintained over the silicon melt, the process comprising

• adjusting the gas pressure of the atmosphere over the melt as the single crystal silicon rod is grown;
• and,
• aspirating vapors and particulate away from the melt.

A process for removing vapors and particulate generated during the production of a single crystal silicon rod which is pulled from a silicon melt in accordance with Czochralski method, the silicon melt being contained within a hermetically sealed chamber of a crystal puller wherein an atmosphere is maintained over the silicon melt, the process comprising:

• purging the atmosphere within the crystal growth chamber radially outwardly of the perimeter of the open top of the crucible with a first curtain of purge gas to remove vapors and particulate away from the surface of the melt, and
• purging the atmosphere within the crystal growth chamber radially inwardly of the perimeter of the open top of the crucible with a second curtain of purge gas to remove vapors and particulate away from the surface of the silicon rod and melt.

A process for controlling oxygen content in a single crystal silicon rod which is pulled from a silicon melt in accordance with Czochralski method, the silicon melt being contained within a hermetically sealed chamber of a crystal puller wherein an atmosphere is maintained over the silicon melt, the process comprising

• adjusting the gas pressure of the atmosphere over the melt as the single crystal silicon rod is grown to a value in excess of 100 torr;
• and,
• purging the atmosphere over the melt.