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AssigneeCentrum Badan Wysokocisnieniowych Polskiej Akademii Nauk
InventorsSylwester Porowski, Michal Bockowski, Izabella Grzegory, Stanislaw Krukowski, Michal Leszczynski, Boleslaw Lucznik, Tadeusz Suski, Miroslaw Wroblewski
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The method of fabrication of highly resistive GaN bulk crystals by crystallization from the solution of atomic nitrogen in the molten mixture of metals, containing gallium in the concentration not lower than 90 at. % and the Periodic Table group II metals: calcium, beryllium or in the concentration of 0.01-10 at. %, at the temperature 1300-1700° C., under the nitrogen pressure 0.5-2.0 GPa and in the presence of temperature gradient characterized by the temperature gradient not higher than 10° C./cm.
A method for fabrication of highly resistive GaN bulk crystals comprising
The method of fabrication of highly resistive GaN bulk crystals, characterized by crystallization from the solution of atomic nitrogen in the molten mixture of semiconductor purity metals, containing gallium in the concentration not lower than 90 at % and a metal selected from the group consisting of calcium, beryllium, and mixtures thereof in a concentration of 0.01-10 at % under a nitrogen pressure 0.5-2.00 GPa.
Dependencies are inferred from the claim text.