Mercury containment for liquid phase growth of mercury cadmium telluride from tellurium-rich solution
AssigneeHoneywell Inc.
InventorsJohn E. Bowers, Joseph L. Schmit
Life of this patent
Estimating the term…
Abstract
Hg.sub.1-x Cd.sub.x Te is an important semiconductor for use in photovoltaic and photoconductive infrared photon detectors. Hg.sub.1-x Cd.sub.x Te can be grown by liquid phase epitaxy at atmospheric pressure from a Te-rich solution in which case the Hg vapor pressure is below 0.1 atm at 500.degree. C. This low vapor pressure makes possible the use of open-tube, slider growth techniques. The present invention describes a covered graphite slider system which provides an additional source of Hg, minimizes loss of Hg from the source wafer and virtually prevents loss of Hg from the (Hg.sub.1-x Cd.sub.x).sub.1-y Te.sub.y growth solution.
Claims7
In a method of mercury containment in the liquid phase epitaxial growth of mercury cadmium telluride from a tellurium-rich solution having steps including,
- providing a slider type graphite boat for use in a liquid phase epitaxy growth furnace,
- providing a well through the graphite boat,
- providing a charge of Te-rich (Hg.sub.1-x Cd.sub.x).sub.1-y Te.sub.y into the well and providing a plug over the charge,
- providing a boat base-member having a recess therein and providing a semiconductor substrate in said recess, the base member and boat being slideably movable one with respect to the other to allow orientation of the well and recess when desired, so that when oriented, Hg.sub.1-x Cd.sub.x Te can grown on said substrate,
- providing a graphite cover over the graphic boat, and heating the boat in the growth furnace;
- the improvement comprising the step of
- providing another mercury supplying charge beneath the cover to generate a Hg vapor pressure approximately equal to the Hg vapor pressure arising from the (Hg.sub.1-x Cd.sub.x).sub.1-y Te.sub.y charge to thereby contain and preclude loss of Hg from the charge of Te-rich (Hg.sub.1-x Cd.sub.x).sub.1-y Te.sub.y.
In a method for mercury containment in the liquid phase epitaxial growth of mercury cadmium telluride from a tellurium-rich solution having steps including,
- providing a charge of Te-rich (Hg.sub.1-x Cd.sub.x).sub.1-y Te.sub.y for use in a slider type liquid phase epitaxy growth furnace;
- the improvement comprising the steps of
- providing a mercury supplying charge to generate a Hg vapor pressure approximately equal to the Hg vapor pressure arising from the (Hg.sub.1-x Cd.sub.x).sub.1-y Te.sub.y charge;
- and
- surrounding the charge of Te-rich (Hg.sub.1-x Cd.sub.x).sub.1-y Te.sub.y with the Hg vapor pressure dissociated from the mercury supplying charge to preclude loss of Hg from the charge of Te-rich (Hg.sub.1-x Cd.sub.x).sub.1-y Te.sub.y.
In a method of mercury containment in the liquid phase epitaxial growth of mercury cadmium telluride from a tellurium-rich solution having steps including,
- providing a slider type graphite boat assembly for use in a liquid-phase epitaxy growth furnace;
- providing a chamber for containing a charge of (Hg.sub.1-x Cd.sub.x).sub.1-y Te.sub.y in a first section of the assembly;
- providing a growth substrate in a second section of the assembly;
- sealing the chamber with the second section;
- heating the growth furnace and boat assembly to near 500.degree. C., a Hg vapor pressure of about 0.1 atm being generated and tending to escape through the seal;
- slideably adjusting the first and second sections with respect to one another and bringing the charge of (Hg.sub.1-x Cd.sub.x).sub.1-y Te.sub.y in contact with the growth substrate thereby, to initiate the HgCdTe growth on the substrate;
- the improvement comprising the step of
- providing another source of Hg vapor from a mercury supplying charge surrounding the chamber seal to prevent Hg from escaping from the chamber.
Dependencies are inferred from the claim text.