Single crystal heat treatment method
AssigneeHitachi Chemical Company, Ltd.
InventorsNaoaki Shimura, Yasushi Kurata, Tatsuya Usui, Kazuhisa Kurashige
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AssigneeHitachi Chemical Company, Ltd.
InventorsNaoaki Shimura, Yasushi Kurata, Tatsuya Usui, Kazuhisa Kurashige
Estimating the term…
The present invention provides a single crystal heat treatment method, having a step of heating a single crystal of a cerium-doped silicate compound represented by any of general formulas (1) to (4) below in an oxygen-containing atmosphere Y2−(x+y)LnxCeySiO5 (1) (wherein Ln represents at least one elemental species selected from a group consisting of elements belonging to the rare earth elements, x represents a numerical value from 0 to 2, and y represents a numerical value greater than 0 but less than or equal to 0.2) Gd2−(z+w)LnzCewSiO5 (2) (wherein Ln represents at least one elemental species selected from a group consisting of elements belonging to the rare earth elements, z represents a numerical value greater than 0 but less than or equal to 2, and w represents a numerical value greater than 0 but less than or equal to 0.2) Gd2-(p+q)LnpCeqSiO5 (3) (wherein Ln represents at least one elemental species selected from a group consisting of Dy, Ho, Er, Tm, Yb, Lu, Y and Sc, which are rare earth elements having an ionic radius smaller than Tb, p represents a numerical value greater than 0 but less than or equal to 2, and q represents a numerical value greater than 0 but less than or equal to 0.2) Gd2−(r+s)LurCesSiO5 (4) (wherein r represents a numerical value greater than 0 but less than or equal to 2, and s represents a numerical value greater than 0 but less than or equal to 0.2).
A single crystal heat treatment method, comprising a step of heating a single crystal of a cerium-doped silicate compound represented by general formula (1) or (2) below in an oxygen-containing atmosphere,
A single crystal heat treatment method, comprising a step of heating a single crystal of a cerium-doped silicate compound represented by general formula (3) below in an oxygen-containing atmosphere,
A single crystal heat treatment method, comprising a step of heating a single crystal of a cerium-doped silicate compound represented by general formula (4) below in an oxygen-containing atmosphere,
A single crystal heat treatment method, comprising a step of heating a single crystal of a cerium-doped silicate compound represented by any of general formulae (1), (2), (3) and (4) below in an oxygen-containing atmosphere,
Dependencies are inferred from the claim text.