Manufacturing method of silicon carbide single crystals
AssigneeDenso Corporation
InventorsMasami Naito, Kazukuni Hara, Fusao Hirose, Shoichi Onda
Life of this patent
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Abstract
When a SiC substrate is heated up to around 1800°C., sublimation of SiC occurs from the SiC substrate. Moreover, temperature of the front surface of the SiC substrate is lower than that of the back surface of the SiC substrate. Therefore, sublimation gas sublimed from a back-surface vicinity of the substrate, where temperature is high, moves to a front-surface vicinity of the substrate, where temperature is low, through the hollow micro-pipe defect. Epitaxial growth proceeds on the front surface of the substrate while the sublimation gas is recrystallized at the front-surface vicinity of the substrate, so that the micro-pipe defect is occluded.
Claims24
A manufacturing method of silicon carbide single crystals, comprising the steps of:
- providing a silicon carbide single-crystal substrate having a micro-pipe therein;
- applying temperature difference in a thickness direction of the substrate so that temperature at a front surface of the substrate is lower than that at a back surface of the substrate that is disposed opposite to the front surface;
- supplying a gas containing at least carbon and a gas containing at least silicon to the front surface to form a silicon carbide film by epitaxial growth.
A manufacturing method of silicon carbide single crystals forming a silicon carbide film by epitaxial growth on a silicon carbide substrate having a micro-pipe, comprising the steps of:
- holding said substrate by a holding means;
- and
- setting flow direction of a gas containing carbon and a gas containing silicon in approximately perpendicular to a front surface of the substrate that has an opening of said micro-pipe, so that said silicon carbide film is formed on the front surface of the silicon carbide substrate by epitaxial growth, wherein flow rate of the gas containing carbon and the gas containing silicon is set 1 m/sec or more.
A manufacturing method for forming silicon carbide single crystals on a silicon carbide substrate having a micro-pipe, comprising the steps of:
- modifying step for enlarging an opening of the micro-pipe that is disposed at a front surface of the substrate;
- and
- film growing step for forming a silicon carbide film by epitaxial growth supplying a gas containing at least carbon and a gas containing at least a silicon to the front surface of the substrate.
24-29. (Cancelled)
Dependencies are inferred from the claim text.