Y10S 117/902
Specified orientation, shape, crystallography, or size of seed or substrate
Y10S117/902 (Specified orientation, shape, crystallography, or size of seed or substrate) appears on 247 US grants and 83 published applications in this corpus.
Search patents in Y10S- Granted patents
- 247
- Published applications
- 83
- Assignees
- 151
- Inventors
- 475
- Latest grant
- 11 Jun 2019
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 7 | 0 |
| 1977 | 7 | 0 |
| 1978 | 8 | 0 |
| 1979 | 3 | 0 |
| 1980 | 4 | 0 |
| 1981 | 6 | 0 |
| 1982 | 7 | 0 |
| 1983 | 3 | 0 |
| 1984 | 2 | 0 |
| 1985 | 3 | 0 |
| 1986 | 4 | 0 |
| 1987 | 5 | 0 |
| 1988 | 5 | 0 |
| 1989 | 8 | 0 |
| 1990 | 8 | 0 |
| 1991 | 7 | 0 |
| 1992 | 6 | 0 |
| 1993 | 6 | 0 |
| 1994 | 12 | 0 |
| 1995 | 4 | 0 |
| 1996 | 2 | 0 |
| 1997 | 6 | 0 |
| 1998 | 14 | 0 |
| 1999 | 10 | 0 |
| 2000 | 13 | 0 |
| 2001 | 8 | 3 |
| 2002 | 4 | 15 |
| 2003 | 6 | 6 |
| 2004 | 8 | 13 |
| 2005 | 11 | 8 |
| 2006 | 6 | 7 |
| 2007 | 8 | 10 |
| 2008 | 8 | 4 |
| 2009 | 4 | 6 |
| 2010 | 7 | 2 |
| 2011 | 5 | 3 |
| 2012 | 3 | 1 |
| 2013 | 0 | 0 |
| 2014 | 3 | 2 |
| 2015 | 3 | 2 |
| 2016 | 2 | 1 |
| 2017 | 0 | 0 |
| 2018 | 0 | 0 |
| 2019 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Method of growing group III nitride crystals11 Jun 2019US 10,316,431 B2Seoul Semiconductor Co., Ltd.
- Method of growing group III nitride crystals13 Dec 2016US 9,518,340 B2Seoul Semiconductor Co., Ltd.
- Process for producing layered member and layered member30 Aug 2016US 9,431,570 B2Hamamatsu Photonics K.K.
- Method of growing group III nitride crystals1 Dec 2015US 9,202,872 B2Seoul Semiconductor Co., Ltd.
- Method of manufacturing silicon carbide single crystal17 Mar 2015US 8,980,003 B2Denso Corporation
- Method of growing group iii nitride crystals11 Feb 2016US 2016/0040318 A1Seoul Semiconductor Co., Ltd.
- Ultrahigh Vacuum Process For The Deposition Of Nanotubes And Nanowires21 May 2015US 2015/0140232 A1
- Process for producing layered member and layered member19 Feb 2015US 2015/0050770 A1Hamamatsu Photonics K.K.
- Method of growing group iii nitride crystals27 Mar 2014US 2014/0087113 A1Seoul Semiconductor Co., Ltd.
- Method of growing group iii nitride crystals27 Mar 2014US 2014/0087209 A1Seoul Semiconductor Co., Ltd.
Most cited
By later US patents
- Method of producing sheets of crystalline material345US 4,727,047 AMassachusetts Institute of Technology · 1988
- Nitride semiconductor wafer273US 7,390,359 B2Sumitomo Electric Industries, Ltd. · 2008
- Monocrystalline optical component with curved surface and multilayer coating271US 7,489,441 B2Carl Zeiss SMT GmbH · 2009
- Method for forming semiconductor device140US 5,753,555 ANEC Corporation · 1998
- Method of making an epitaxial gallium arsenide semiconductor wafer using a strained layer superlattice132US 4,963,508 ADaido Tokushuko Kabushiki Kaisha · 1990