Method of growing group III nitride crystals
AssigneesSixPoint Materials, Inc., Seoul Semiconductor Co., Ltd.
InventorsTadao Hashimoto, Edward Letts, Sierra Hoff
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Abstract
The present invention provides a method of growing an ingot of group III nitride. Group III nitride crystals such as GaN are grown by the ammonothermal method on both sides of a seed to form an ingot and the ingot is sliced into wafers. The wafer including the first-generation seed is sliced thicker than the other wafers so that the wafer including the first-generation seed does not break. The wafer including the first-generation seed crystal can be used as a seed for the next ammonothermal growth.
Claims21
A method of making a group III nitride composed of GaxAlyIn1-x-yN (0≦x≦1, 0≦x+y≦1) comprising:
- (a) growing a first group III nitride crystal on a first face and growing a second group III nitride crystal on a second face of a first-generation seed to form a first ingot of group III nitride;
- (b) slicing the first ingot into a first, second, and third wafer;
- wherein the first wafer includes the first-generation seed, and the first wafer has a thickness greater than a thickness of each of the second wafer and the third wafer, and wherein the thickness of the first wafer containing the first-generation seed is large enough to avoid breaking of the first wafer.
A method of fabricating group III nitride wafers composed of GaxAlyIn1-x-yN (0≦x≦1, 0≦x+y≦1) comprising:
- (a) growing group III nitride crystals on both faces of a seed of group III nitride to form an ingot of group III nitride;
- (b) slicing the ingot of group III nitride into wafers with a multiple wire saw wherein the pitch of the wire is changed so that the wafer which includes the seed is thicker than other wafers sliced from the ingot.
Dependencies are inferred from the claim text.