Method of manufacturing silicon carbide single crystal
AssigneeDenso Corporation
InventorsHiroki Watanabe, Yasuo Kitou, Masami Naito
Life of this patent
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Abstract
In a method of manufacturing a silicon carbide single crystal, a silicon carbide substrate having a surface of one of a (11-2n) plane and a (1-10n) plane, where n is any integer number greater than or equal to 0, is prepared. An epitaxial layer having a predetermined impurity concentration is grown on the one of the (11-2n) plane and the (1-10n) plane of the silicon carbide substrate by a chemical vapor deposition method so that a threading dislocation is discharged from a side surface of the epitaxial layer. A silicon carbide single crystal is grown into a bulk shape by a sublimation method on the one of the (11-2n) plane and the (1-10n) plane of the epitaxial layer from which the threading dislocation is discharged.
Claims16
A method of manufacturing a silicon carbide single crystal, comprising:
- preparing a silicon carbide substrate having a surface of one of a (11-2n) plane and a (1-10n) plane, where n is any integer number greater than or equal to 0, the silicon carbide substrate having threading dislocations whose angles with respect to a C-axis vary;
- growing an epitaxial layer having a predetermined impurity concentration on the one of the (11-2n) plane and the (1-10n) plane of the silicon carbide substrate by a chemical vapor deposition method and growing the threading dislocations approximately parallel to the one of the (11-2k) plane and the (1-10k) plane, where k is any integer number greater than or equal to 2, and discharging the threading dislocations from a side surface of the epitaxial layer;
- and
- growing a silicon carbide single crystal into a bulk shape by a sublimation method on the one of the (11-2n) plane and the (1-10n) plane of the epitaxial layer from which the threading dislocations were discharged.
A method of manufacturing a silicon carbide single crystal, comprising:
- preparing a silicon carbide substrate having a surface in a plane selected from the group consisting of a (11-2n) plane and a (1-10n) plane, where n is an integer greater than or equal to 0,the silicon carbide substrate having threading dislocations whose angles with respect to a C-axis vary;
- growing an epitaxial layer having a predetermined impurity concentration on the surface of the selected plane of the silicon carbide substrate by a. chemical vapor deposition method, causing a threading dislocation to grow approximately parallel to the selected plane and discharging the threading dislocation from a side surface of the epitaxial layer;
- and
- growing a silicon carbide single crystal into a bulk shape by a sublimation method on the selected plane of the epitaxial layer from which the threading dislocation was discharged.
Dependencies are inferred from the claim text.