H10N 99/03
Devices using mott metal-insulator transition
Official title: {Devices using Mott metal-insulator transition, e.g. field-effect transistor-like devices}
H10N99/03 (Devices using mott metal-insulator transition) appears on 99 US grants and 120 published applications in this corpus.
Search patents in H10N- Granted patents
- 99
- Published applications
- 120
- Assignees
- 44
- Inventors
- 198
- Latest grant
- 9 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2000 | 1 | 0 |
| 2001 | 3 | 2 |
| 2002 | 4 | 1 |
| 2003 | 2 | 3 |
| 2004 | 0 | 2 |
| 2005 | 2 | 3 |
| 2006 | 2 | 5 |
| 2007 | 0 | 2 |
| 2008 | 2 | 4 |
| 2009 | 1 | 6 |
| 2010 | 1 | 5 |
| 2011 | 4 | 8 |
| 2012 | 3 | 3 |
| 2013 | 5 | 5 |
| 2014 | 4 | 7 |
| 2015 | 4 | 4 |
| 2016 | 5 | 4 |
| 2017 | 10 | 12 |
| 2018 | 8 | 11 |
| 2019 | 9 | 14 |
| 2020 | 11 | 8 |
| 2021 | 7 | 4 |
| 2022 | 3 | 3 |
| 2023 | 3 | 3 |
| 2024 | 2 | 1 |
| 2025 | 1 | 0 |
| 2026 | 2 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Piezoresistive transistor device and power electronic module including a piezoresistive transistor device9 Jun 2026US 12,652,971 B2Infineon Technologies AG
- Topological quantum field effect transistor28 Apr 2026US 12,615,972 B2Monash University
- Electronic device including heterogeneous singlecrystal transition metal oxide layer disposed on substrate, and method for manufacturing the same21 Oct 2025US 12,453,131 B2Postech Research and Business Development Foundation
- Gating a semiconductor layer into a quantum spin hall insulator state30 Apr 2024US 11,973,131 B2Microsoft Technology Licensing, LLC
- Monolithic metal-insulator transition device and method for manufacturing the same20 Feb 2024US 11,908,931 B2Electronics and Telecommunications Research Institute
- Piezoresistive transistor device and power electronic module including a piezoresistive transistor device14 Mar 2024US 2024/0090355 A1Infineon Technologies AG
- Topological quantum field effect transistor21 Dec 2023US 2023/0413700 A1Monash University
- Correlated electron resistive memory device and integration schemes23 Feb 2023US 2023/0053935 A1Globalfoundries Singapore Pte. Ltd.
- Gating a semiconductor layer into a quantum spin hall insulator state9 Feb 2023US 2023/0038763 A1Microsoft Technology Licensing, LLC
- Electronic device including heterogeneous singlecrystal transition metal oxide layer disposed on substrate, and method for manufacturing the same29 Dec 2022US 2022/0416083 A1Postech Research and Business Development Foundation
Most cited
By later US patents
- Junction mott transition field effect transistor (JMTFET) and switch for logic and memory applications102US 6,121,642 AInternational Business Machines Corporation · 2000
- Switching field effect transistor using abrupt metal-insulator transition53US 6,624,463 B22003
- Access devices to correlated electron switch33US 9,735,360 B2Arm Limited · 2017
- Programmable current for correlated electron switch29US 9,748,943 B2Arm Limited · 2017
- Asymmetric correlated electron switch operation28US 9,755,146 B2Arm Limited · 2017