Electronic device including heterogeneous singlecrystal transition metal oxide layer disposed on substrate, and method for manufacturing the same

An electronic device comprising:

• a semiconductor substrate;
• a single-crystal first transition metal oxide layer on the semiconductor substrate;
• and
• a single-crystal second transition metal oxide layer spaced apart from the semiconductor substrate with the single-crystal first transition metal oxide layer interposed therebetween,
• wherein:
• the first and second transition metal oxide layers are in contact with each other;
• the semiconductor substrate, the first transition metal oxide layer, and the second transition metal oxide layer include different materials from each other;
• the first transition metal oxide layer and the second transition metal oxide layer have the same crystal direction;
• the first transition metal oxide layer comprises a rutile-phased TiO2 thin film;
• the second transition metal oxide layer comprises any one selected between a rutile-phased VO2 thin film or a rutile-phased RuO2 thin film;
• the semiconductor substrate has the crystal direction of (100);
• the first transition metal oxide layer and the second transition metal oxide layer have the crystal direction of (001);
• and
• wherein the second transition metal oxide layer has a thickness of 5 to 10 nm.