Topological quantum field effect transistor
AssigneesMonash University, NewSouth Innovations Pty Limited, University of Wollongong
InventorsDimitrie Culcer, Michael Sears Fuhrer, Muhammad Nadeem
Life of this patent
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Abstract
A transistor comprises a planar layer of a topological material located between a gate electrode and a dielectric layer. The topological material exhibits a topological phase transition between a trivial state and a non-trivial state at a critical electric field strength on application of an electric field in a direction perpendicular to the planar layer. The topological material exhibits a change in bandgap, in the presence of the electric field, having a Rashba spin-dependent bandgap contribution that is at least three times as large as a non-spin-dependent bandgap contribution.
Claims21
A structure comprising:
- a gate electrode,
- a dielectric layer, and
- a planar layer of a topological material being separated from the gate electrode by at least the dielectric layer, and having a contact interface with the dielectric layer to generate an electric field-controlled Rashba spin-orbit interaction on application of an electric field thereto,
- wherein the topological material exhibits a topological phase transition between a trivial state and a non-trivial state at a critical electric field strength on the application of the electric field,
- wherein the gate electrode is configured to apply the electric field across the planar layer in a direction perpendicular to a plane of the planar layer;
- and
- wherein the topological material exhibits a change in bandgap, in presence of the electric field, having a spin-dependent contribution represented by a proportionality constant αR and a non-spin-dependent contribution represented by a proportionality constant αv;
- and
- wherein αR>αv/3.
A structure comprising:
- a gate electrode,
- a dielectric layer, and
- a planar layer of a topological material being separated from the gate electrode by at least the dielectric layer, and having a contact interface with the dielectric layer to generate an electric field-controlled Rashba spin-orbit interaction on application of an electric field thereto,
- wherein the topological material exhibits a topological phase transition between a trivial state and a non-trivial state at a critical electric field strength on the application of the electric field,
- wherein the gate electrode is configured to apply the electric field across the planar layer in a direction perpendicular to a plane of the planar layer;
- and
- wherein the topological material exhibits a change in bandgap potential having a spin-dependent contribution of magnitude ΔR=αREz and a non-spin-dependent contribution of magnitude Δv=αvEz;
- where:
- ΔR is the spin-dependent contribution to the change in the bandgap potential;
- αR is a proportionality constant representing the spin-dependent contribution to the change in bandgap;
- Δv is the non-spin-dependent contribution to the change in the bandgap potential;
- and
- αv is a proportionality constant representing the non-spin-dependent contribution to the change in the bandgap potential;
- Ez is a strength of the electric field applied thereto and
- wherein αR>αv/3.
Dependencies are inferred from the claim text.