Back to results
US 6,121,642 AGranted
Junction mott transition field effect transistor (JMTFET) and switch for logic and memory applications
AssigneeInternational Business Machines Corporation
InventorDennis Merton Newns
Life of this patent
Estimating the term…
Abstract
A device includes first and second contacts formed on a channel material, a film of doped first insulator material interposed between the first and second contacts, and a second insulator material interfaced with the doped first insulator material with an area of said channel material therebetween. The second insulator material is doped so as to have carriers of opposite charge to those in the channel material.
Claims24
A device, comprising:
- a channel material;
- first and second contacts formed on a first side of said channel material;
- a film of doped first insulator material interposed between said first and second contacts;
- a second insulator material interfaced with said doped first insulator material with an area of said channel material therebetween;
- and
- a gate formed at a second side of said channel material, said second side of said channel material being opposed to said first side of said channel material,
- said second insulator material begin doped so as to have carriers of opposite charge to those in the channel material.
4 more elements
A device, comprising:
- a channel material;
- first and second contacts formed on said channel material;
- a film of doped first insulator material interposed between said first and second contacts;
- and
- a second insulator material interfaced with said doped first insulator material with an area of said channel material therebetween, and
- said second insulator material begin doped so as to have carriers of opposite charge to those in the channel material,
- wherein said second insulator material comprises a relatively high dielectric constant material, comprising a ferroelectric perovskite including strontium titanate (STO) doped with a predetermined concentration of Nb.
4 more elements
A dynamic random access memory (DRAM), comprising:
- a switch, said switch including:
- a channel material;
- first and second contacts formed on a first side of said channel material;
- a film of doped first insulator material interposed between said first and second contacts;
- a second insulator material interfaced with said doped first insulator material with an area of said channel material therebetween;
- and
- a gate formed at a second side of said channel material, said second side of said channel material being opposed to said first side of said channel material,
- said second insulator material begin doped so as to have carriers of opposite charge to those in the channel material.
5 more elements
Dependencies are inferred from the claim text.