Monolithic metal-insulator transition device and method for manufacturing the same

A monolithic metal-insulator transition device comprising:

• a lower electrode;
• a substrate provided on the lower electrode, having a first impurity, a driving region and a switching region in contact with the driving region;
• a channel well region provided within the substrate in the driving region and having a second impurity;
• a gate electrode on a center of the channel well region;
• a first source/drain region provided on one side of the channel well region and having the first impurity;
• a second source/drain region provided on another side of the channel well region, having the first impurity, and being deeper than the first source/drain region;
• a control well region provided within the substrate in the switching region and having a depth different from that of the second impurity and the channel well region;
• an inlet well region provided within the center of the control well region;
• an inlet contact area provided within a center of the inlet well region and having a first depth;
• a control contact area within an edge of the control well area outside both sides of the inlet well region;
• a first contact provided on the first source/drain region;
• a second contact provided on the second source/drain region;
• a gate contact provided on the gate electrode;
• an inlet contact provided on the inlet contact area;
• a control contact provided on the control contact area;
• a first line connecting the first contact to the control contact;
• a second line connecting the second contact to the inlet contact;
• and
• a third line connected to the gate contact,
• wherein the first source/drain region comprises:
• a first lower concentration impurity region having the first impurity, the first depth, a first width, and a first edge aligned with one edge of the gate electrode;
• and
• a first higher concentration impurity region provided in the first lower concentration impurity region and having the first depth and a second width narrower than the first width, the first higher concentration impurity region being disposed at a first distance from the first edge, and having a concentration higher than that of the first impurity of the first lower concentration impurity region,
• wherein the second source/drain region comprises:
• a second lower concentration impurity region having a second depth deeper than the first depth, a second width wider than the first width, and a second edge partially overlapping another edge of the gate electrode;
• and
• a second higher concentration impurity region provided in the second lower concentration impurity region and disposed at a second distance longer than the first distance from the second edge, the second higher concentration impurity region having the first depth, the second width, and a concentration higher than that of the second lower concentration impurity region of the first impurity.