H10K 10/486
The channel region comprising two or more active layers
Official title: {the channel region comprising two or more active layers, e.g. forming pn heterojunctions}
H10K10/486 (The channel region comprising two or more active layers) appears on 192 US grants and 244 published applications in this corpus.
Search patents in H10K- Granted patents
- 192
- Published applications
- 244
- Assignees
- 130
- Inventors
- 530
- Latest grant
- 23 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1997 | 2 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 0 |
| 2002 | 0 | 1 |
| 2003 | 0 | 0 |
| 2004 | 2 | 6 |
| 2005 | 1 | 2 |
| 2006 | 0 | 5 |
| 2007 | 3 | 7 |
| 2008 | 3 | 9 |
| 2009 | 2 | 8 |
| 2010 | 5 | 15 |
| 2011 | 11 | 10 |
| 2012 | 13 | 14 |
| 2013 | 9 | 16 |
| 2014 | 15 | 16 |
| 2015 | 8 | 20 |
| 2016 | 23 | 19 |
| 2017 | 14 | 19 |
| 2018 | 17 | 23 |
| 2019 | 14 | 9 |
| 2020 | 16 | 8 |
| 2021 | 9 | 9 |
| 2022 | 2 | 8 |
| 2023 | 7 | 11 |
| 2024 | 7 | 5 |
| 2025 | 6 | 3 |
| 2026 | 2 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Transistors with channels formed of low-dimensional materials and method forming same23 Jun 2026US 12,666,858 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Multi-level device and method of manufacturing the same5 May 2026US 12,622,124 B2Postech Research and Business Development Foundation
- Display apparatus and method of manufacturing the same4 Nov 2025US 12,464,905 B2Samsung Display Co., Ltd.
- 2D material-integrated halide perovskite thin-film semiconductor device and its fabrication method28 Oct 2025US 12,457,840 B1Industry-Academic Cooperation Foundation, Kunsan National University
- Organic transistor material and organic transistor30 Sep 2025US 12,433,153 B2Organo Science Co., Ltd.
- Display apparatus and method of manufacturing the same29 Jan 2026US 2026/0033168 A1Samsung Display Co., Ltd.
- Semiconductor device including two-dimensional material and method of manufacturing the same9 Oct 2025US 2025/0318172 A1Samsung Electronics Co., Ltd.
- Perovskite composite comprising antimony trifluoride, electronic element comprising same, and preparation method therefor5 Jun 2025US 2025/0179356 A1Postech Research and Business Development Foundation
- Anti-ambipolar bilayer organic electrochemical transistors20 Feb 2025US 2025/0063880 A1Northwestern University
- Methods of Manufacturing a Field Effect Transistor Using Carbon Nanotubes and Field Effect Transistors12 Dec 2024US 2024/0414927 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Article comprising an organic thin film transistor73US 5,596,208 ALucent Technologies Inc. · 1997
- Electronic device comprising organic compound having p-type semiconducting characteristics73US 6,720,573 B2LG Chemical Ltd. · 2004
- Article comprising an organic thin film transistor adapted for biasing to form a N-type or a P-type transistor69US 6,278,127 B1Agere Systems Guardian Corp. · 2001
- Display device and electronic apparatus having a wiring connected to a counter electrode via an opening portion in an insulating layer that surrounds a pixel electrode47US 7,224,118 B2Semiconductor Energy Laboratory Co.Ltd. · 2007
- Quantum dot-fullerene junction based photodetectors41US 8,742,398 B2Research Triangle Institute, Int'l. · 2014