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US 6,278,127 B1Granted
Article comprising an organic thin film transistor adapted for biasing to form a N-type or a P-type transistor
AssigneeAgere Systems Guardian Corp.
InventorsAnanth Dodabalapur, Robert Cort Haddon, Howard Edan Katz, Luisa Torsi
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Abstract
Disclosed are organic thin film transistors that can be either n-channel or p-channel transistors, depending on biasing conditions. Such transistors are expected to find wide use in complementary circuits. A specific embodiment of the inventive transistor comprises a 15 nm thick layer of α-6T with a 40 nm thick layer of C60 thereon. The latter was protected against degradation by the ambient by means of an appropriate electrically inert layer, specifically by a 40 nm α-6T layer.
Claims10
An article comprising a thin film transistor comprising
- a) a quantity of organic material;
- b) spaced apart source and drain contacts in contact with said quantity of organic material;
- c) a gate contact that is spaced from each of said source and drain contacts;
- and
- d) the quantity of organic material comprises a layer that comprises a p-type organic material and a layer that comprises n-type organic material, said layers being in contact with each other at least in a region between the source and drain contacts;
- CHARACTERIZED IN THAT
- e) the article comprises at least two essentially identical ones of said thin film transistors, and further comprises one or more conductive connections between said two thin film transistors;
- and
- f) the article further comprises means for biasing one of said two thin film transistors to form a p-channel transistor, and means for biasing the other of said two thin film transistors to form an n-channel transistor.
6 more elements
Dependencies are inferred from the claim text.