Quantum dot-fullerene junction based photodetectors
AssigneeResearch Triangle Institute, Int'l.
InventorsEthan Klem, John Lewis
Life of this patent
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Abstract
A photodetector includes one or more photodiodes and a signal processing circuit. Each photodiode includes a transparent first electrode, a second electrode, and a heterojunction interposed between the first electrode and the second electrode. Each heterojunction includes a quantum dot layer and a fullerene layer disposed directly on the quantum dot layer. The signal processing circuit is in signal communication each the second electrode. The photodetector may be responsive to wavelengths in the infrared, visible, and/or ultraviolet ranges. The quantum dot layer may be treated with a chemistry that increases the charge carrier mobility of the quantum dot layer.
Claims33
A photodetector, comprising:
- a photodiode comprising a transparent first electrode, a second electrode, and a heterojunction interposed between the first electrode and the second electrode, the heterojunction comprising a quantum dot layer and a fullerene layer disposed directly on the quantum dot layer, the quantum dot layer comprising a plurality of quantum dots and the fullerene layer comprising a plurality of fullerenes;
- and
- a signal processing circuit in signal communication with the second electrode.
A photodetector, comprising:
- a plurality of photodiodes, each photodiode comprising a transparent first electrode, a second electrode, and a heterostructure interposed between the first electrode and the second electrode, each heterostructure comprising a quantum dot layer and a fullerene layer disposed directly on the quantum dot layer, each quantum dot layer comprising a plurality of quantum dots and each fullerene layer comprising a plurality of fullerenes;
- and
- a signal processing circuit in signal communication with each second electrode.
A method for fabricating a photodetector, the method comprising:
- forming a heterostructure on a first electrode, the heterostructure comprising a quantum dot layer and a fullerene layer in contact with each other, the quantum dot layer comprising a plurality of quantum dots and the fullerene layer comprising a plurality of fullerenes;
- forming a second electrode on a side of the heterostructure opposite to the first electrode wherein one or both of the first or second electrodes is transparent;
- and
- placing the first electrode in signal communication with a signal processing circuit.
Dependencies are inferred from the claim text.