Perovskite composite comprising antimony trifluoride, electronic element comprising same, and preparation method therefor

A perovskite transistor comprising:

• a gate electrode;
• an insulating layer disposed on the gate electrode;
• an active layer disposed on the insulating layer, the active layer comprising a perovskite composite comprising a tin (Sn)-based perovskite and antimony trifluoride (SbF3);
• and
• a source electrode and a drain electrode spaced from each other while being disposed on the active layer.

A method of preparing a perovskite composite, the method comprising:

• (a) preparing a mixed solution by mixing antimony trifluoride (SbF3) in a solution comprising a compound represented by Structural Formula 2 and a tin halide represented by Structural Formula 3;
• (b) preparing a perovskite precursor solution by heating the mixed solution;
• and
• (c) preparing a perovskite composite comprising a tin (Sn)-based perovskite and the SbF3 by drying the perovskite precursor solution and then subjecting the dried perovskite precursor solution to heat treatment,
• A(1-a)(B(1-b)Cb)a(X(1-c)Yc)1 [Structural Formula 2]
• Sn(X(1-c)Yc)2 [Structural Formula 3]
• where in Structural Formulas 2 and 3,
• A is cesium (Cs),
• B and C are different from each other and are each independently methylammonium (MA) or formamidinium (FA),
• a is a real number of 0≤a≤1,
• b is a real number of 0≤b≤1,
• X and Y are different from each other and are each independently fluorine (F), chlorine (Cl), bromine (Br), or iodine (I), and
• c is a real number of 0≤c≤1.