2D material-integrated halide perovskite thin-film semiconductor device and its fabrication method
AssigneeIndustry-Academic Cooperation Foundation, Kunsan National University
InventorsJung Yup Yang, Hyojung Kim
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Abstract
A halide perovskite thin film semiconductor device according to an embodiment of the present invention includes: a substrate; a halide perovskite layer formed on an upper surface side of the substrate; a two-dimensional material layer formed on the halide perovskite layer; an electrode unit disposed on the halide perovskite layer and including a drain electrode and a source electrode; and a polymer layer formed on the two-dimensional material layer and the electrode unit, wherein the two-dimensional material layer is characterized by being manufactured by being stacked on the halide perovskite layer by a dry transfer method.
Claims12
A semiconductor device comprising:
- a substrate;
- a halide perovskite layer formed on an upper surface side of the substrate;
- a two-dimensional material layer formed on the halide perovskite layer;
- an electrode unit disposed on the halide perovskite layer and including a drain electrode and a source electrode;
- and
- a polymer layer formed on the two-dimensional material layer and the electrode unit, and
- wherein the two-dimensional material layer is manufactured by being stacked on the halide perovskite layer by a dry transfer method,
- wherein a gap between the two-dimensional material layer and any one electrode of the drain electrode and the source electrode is adjusted based on a predetermined length, thereby controlling electrical characteristics of the semiconductor device.
Dependencies are inferred from the claim text.