H10F 77/1465
Including only group iv materials
Official title: {including only Group IV materials, e.g. Si-SiGe superlattices}
H10F77/1465 (Including only group iv materials) appears on 100 US grants and 92 published applications in this corpus.
Search patents in H10F- Granted patents
- 100
- Published applications
- 92
- Assignees
- 60
- Inventors
- 221
- Latest grant
- 28 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1987 | 2 | 0 |
| 1988 | 3 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 3 | 0 |
| 1997 | 1 | 0 |
| 1998 | 5 | 0 |
| 1999 | 4 | 0 |
| 2000 | 2 | 0 |
| 2001 | 1 | 0 |
| 2002 | 4 | 2 |
| 2003 | 1 | 0 |
| 2004 | 1 | 1 |
| 2005 | 2 | 5 |
| 2006 | 2 | 1 |
| 2007 | 1 | 2 |
| 2008 | 2 | 5 |
| 2009 | 5 | 6 |
| 2010 | 4 | 6 |
| 2011 | 2 | 3 |
| 2012 | 4 | 3 |
| 2013 | 2 | 5 |
| 2014 | 2 | 3 |
| 2015 | 4 | 7 |
| 2016 | 4 | 5 |
| 2017 | 2 | 2 |
| 2018 | 3 | 4 |
| 2019 | 8 | 7 |
| 2020 | 5 | 6 |
| 2021 | 3 | 3 |
| 2022 | 6 | 5 |
| 2023 | 3 | 2 |
| 2024 | 4 | 3 |
| 2025 | 0 | 1 |
| 2026 | 1 | 5 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Avalanche photodiodes with lower excess noise and lower bandwidth variation28 Apr 2026US 12,615,854 B2Ciena Corporation
- Photo sensing device and method of fabricating the photo sensing device26 Nov 2024US 12,154,996 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Avalanche photodiodes with lower excess noise and lower bandwidth variation6 Aug 2024US 12,057,518 B2Ciena Corporation
- Photodetector and method for forming the same23 Jul 2024US 12,046,689 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Electrical devices making use of counterdoped junctions30 Jan 2024US 11,888,079 B2Quantum Semiconductor LLC
- Single-photon avalanche diode (spad) devices including a superlattice at multiplication region interface11 Jun 2026US 2026/0164816 A1Atomera Incorporated
- Single-photon avalanche diode (spad) devices including a superlattice adjacent guard ring11 Jun 2026US 2026/0164839 A1Atomera Incorporated
- Method for making single-photon avalanche diode (spad) devices including a superlattice at multiplication region interface11 Jun 2026US 2026/0164840 A1Atomera Incorporated
- Method for making single-photon avalanche diode (spad) devices including a superlattice adjacent guard ring11 Jun 2026US 2026/0164841 A1Atomera Incorporated
- Semiconductor-Graphene Heterojunction Quad-Detectors For Low-Power Laser Alignment16 Apr 2026US 2026/0104252 A1The Regents of the University of Michigan
Most cited
By later US patents
- Semiconductor components, in particular photodetectors, light emitting diodes, optical modulators and waveguides with multilayer structures grown on silicon substrates219US 6,403,975 B1Max-Planck Gesellschaft zur Forderung der WissenschafteneeV · 2002
- Method of fabricating quantum bridges by selective etching of superlattice structures62US 5,630,905 AThe Regents of the University of California · 1997
- CMOS image sensor including superlattice to enhance infrared light absorption58US 10,276,625 B1Atomera Incorporated · 2019
- Direct-gap germanium-tin multiple-quantum-well electro-optical devices on silicon or germanium substrates55US 5,548,128 AThe United States of America as represented by the Secretary of the Air Force · 1996
- Phototonic device with strain-induced three dimensional growth morphology55US 6,331,445 B1National Research Council of Canada · 2001