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US 5,630,905 AGranted
Method of fabricating quantum bridges by selective etching of superlattice structures
AssigneeThe Regents of the University of California
InventorsWilliam T. Lynch, Kang L. Wang, Martin O. Tanner
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Abstract
A quantum bridge structure including wires of a semiconductor material such as silicon which are formed by selectively etching a superlattice of alternating layers of at least two semiconductor materials. The quantum bridge is useful as a photo emission device, a photo detector device, and a chemical sensor. The wires exhibit improved electrical conduction properties due to decreased Coulomb scattering.
Claims14
A method of fabricating a quantum bridge structure comprising the steps of
- a) providing a supporting substrate having a monocrystalline surface of a first semiconductor material,
- b) depositing a buffer layer on said monocrystalline surface for stress relaxation,
- c) alternately depositing layers of said first semiconductor material and a second semiconductor material over said buffer layer to form a superlattice structure,
- d) etching trenches through said superlattice structure to form parallel rows of superlattice material and to form end support members for parallel wires, and
- e) selectively etching said second semiconductor material from said parallel rows thereby forming parallel wires of said first semiconductor material, said parallel wires including a plurality of horizontally spaced wires parallel to said monocrystalline surface and a plurality of vertically stacked wires.
2 more elements
Dependencies are inferred from the claim text.