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US 6,331,445 B1Granted
Phototonic device with strain-induced three dimensional growth morphology
AssigneeNational Research Council of Canada
InventorsSiegfried Janz, Hughes Lafontaine, Dan-Xia Xu
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Abstract
In order to fabricate a photonic device with an enhanced photoresponse at 155 nm, a plurality of undulating quantum well layers are grown on said substrate in a three dimensional growth mode to defeat the limitations imposed by strain on the maximum layer thickness. The quantum wells typically are formed by epitaxially growing alternating layers of Si1−x,Gex, and Si on a silicon substrate.
Claims12
A method of fabricating a photonic device comprising the steps of:
- providing a substrate;
- and
- providing a quantum well structure on said substrate by alternately growing layers of a first material and a second material providing a barrier layer, said first material forming quantum wells and comprising at least two components, and said layers of said first material being grown in a three dimensional morphology growth mode such that the thickness of said layers of said first material varies over the surface thereof to reduce local strain energy and increase local concentrations of one of said components.
A method of fabricating a photonic device comprising the steps of:
- providing a substrate;
- and
- forming a quantum well structure on said substrate by alternately growing layers of a first material having an undulating thickness and forming quantum wells in a three dimensional morphology growth mode such that the thickness of said layers of said first material varies over the surface thereof to reduce local strain energy, and a second material providing a barrier layer;
- and
- wherein said undulating layers are formed with coherent wave thickness modulations.
2 more elements
Dependencies are inferred from the claim text.