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AssigneeMax-Planck Gesellschaft zur Forderung der WissenschafteneeV
InventorsKarl Brunner, Karl Eberl
Estimating the term…
A semiconductor component, selected from the group comprising a photodetector, a light emitting diode, an optical modulator and a waveguide. The semiconductor component comprises an Si substrate, an active region formed on said substrate, and an Si capping layer on said active region. In one embodiment the active region is a superlattice comprising alternating layers of Si1-yCy and Si1-x-yGexCy, with the atomic fraction y of the Si1-x-yGexCy layers being equal to or different from the atomic fraction y of the Si1-yCy layers. In another embodiment it is a superlattice comprising a plurality of periods of a three-layer structure comprising Si, Si1-yCy and Si1-xGex layers. In a third embodiment it is a superlattice comprising a plurality of periods of a three-layer structure comprising Si, Si1-yCy and Si1-x-yGexCy layers, with the atomic fraction y of the Si1-x-yGexCy layers being equal to or different from the atomic fraction y of the Si1-yCy layers. The components have faborable optical and electrical properties and are suitable for integration on a Si substrate.
A semiconductor component, selected from the group comprising a photodetector, a light emitting diode, an optical modulator, and a waveguide, the semiconductor component being configured for operation in the wavelength range from 1.3 μm to 1.55 μm and comprising an Si substrate, an active region formed on said substrate, and an Si capping layer on said active region, wherein said active region comprises one of the following layer structures:
A semiconductor component in accordance with claim 9, wherein said superlattice structure comprises about 50 periods of the repeating layer structure.
A semiconductor component in accordance with claim 26, wherein the atomic fraction x of Ge is varied within the respective layer thickness.
A semiconductor component, selected from the group comprising a photodetector, a light emitting diode, an optical modulator, and a waveguide, the semiconductor component being configured for operation in the wavelength range from 1.3 μm to 1.55 μm and comprising an Si substrate, an active region formed on said substrate, and an Si capping layer on said active region, wherein said active region comprises one of the following layer structures:
Dependencies are inferred from the claim text.