H10F 39/028
Performed after manufacture of the image sensors
Official title: {performed after manufacture of the image sensors, e.g. annealing, gettering of impurities, short-circuit elimination or recrystallisation}
H10F39/028 (Performed after manufacture of the image sensors) appears on 373 US grants and 443 published applications in this corpus.
Search patents in H10F- Granted patents
- 373
- Published applications
- 443
- Assignees
- 150
- Inventors
- 795
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 2 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 2 | 0 |
| 2001 | 3 | 3 |
| 2002 | 4 | 3 |
| 2003 | 4 | 5 |
| 2004 | 6 | 0 |
| 2005 | 1 | 6 |
| 2006 | 2 | 4 |
| 2007 | 3 | 3 |
| 2008 | 3 | 4 |
| 2009 | 4 | 3 |
| 2010 | 2 | 15 |
| 2011 | 7 | 10 |
| 2012 | 6 | 13 |
| 2013 | 10 | 14 |
| 2014 | 12 | 22 |
| 2015 | 15 | 32 |
| 2016 | 32 | 54 |
| 2017 | 49 | 40 |
| 2018 | 45 | 29 |
| 2019 | 26 | 29 |
| 2020 | 22 | 27 |
| 2021 | 23 | 24 |
| 2022 | 23 | 25 |
| 2023 | 13 | 27 |
| 2024 | 22 | 19 |
| 2025 | 16 | 24 |
| 2026 | 10 | 8 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Signal shielding for integrated circuits29 Sep 2026US 12,751,104 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method for forming backside illumination CMOS image sensor25 Aug 2026US 12,720,880 B2Hua Hong Semiconductor (Wuxi) Limited
- Geiger-mode avalanche photodiode arrays fabricated on silicon-on-insulator substrates30 Jun 2026US 12,672,382 B2Massachusetts Institute of Technology
- Vertical transfer gate doping distribution for charge transfer from a photodiode23 Jun 2026US 12,666,735 B2OmniVision Technologies, Inc.
- Photosensitive imaging devices and associated methods23 Jun 2026US 12,666,748 B2SiOnyx, Inc.
- Method for manufacturing photodetector, and photodetector17 Sep 2026US 2026/0282565 A1Hamamatsu Photonics K.K.
- Manufacturing method of image sensor package25 Jun 2026US 2026/0182052 A1Samsung Electronics Co., Ltd.
- Enhanced trench isolation structure25 Jun 2026US 2026/0182066 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Pixel structure and method of forming the same18 Jun 2026US 2026/0173562 A1OmniVision Technologies, Inc.
- Radiation detector, detection unit, radiation imaging system, and method for manufacturing detection unit14 May 2026US 2026/0136688 A1Canon Kabushiki Kaisha
Most cited
By later US patents
- Solid-state image pickup device150US 6,188,094 B1Canon Kabushiki Kaisha · 2001
- Processes for lift-off of thin film materials and for the fabrication of three dimensional integrated circuits117US 5,244,818 AGeorgia Tech Research Corporation · 1993
- Semiconductor substrate for solid-state image sensing device as well as solid-state image sensing device and method for producing the same95US 8,063,466 B2Sumco Corporation · 2011
- Solid-state image pickup device using layers having different refractive indices85US 6,605,850 B1Canon Kabushiki Kaisha · 2003
- Backside illuminated image sensor62US 7,875,948 B22011