Method for manufacturing photodetector, and photodetector

A method for manufacturing a light detection device, comprising:

• a process of preparing a semiconductor wafer having a first main surface and a second main surface on an opposite side from the first main surface, the semiconductor wafer including a plurality of light receiving regions;
• a process of providing a first support substrate on the first main surface after the process of preparing the semiconductor wafer;
• a process of cutting the semiconductor wafer and the first support substrate for each of the plurality of light receiving regions in a state where the first support substrate is provided on the first main surface, and obtaining a light receiving element corresponding to a part of the cut semiconductor wafer in a state where a support member corresponding to a part of the cut first support substrate is provided on a first surface corresponding to a part of the cut first main surface, after the process of providing the first support substrate;
• and
• a process of, by using a plurality of bump electrodes arranged between a second surface corresponding to a part of the cut second main surface and a mounting surface of a circuit structure, electrically and physically connecting the light receiving element and the circuit structure after the process of obtaining the light receiving element;
• wherein in the light receiving element, an electrode pad provided on a side of the second surface is electrically connected to a semiconductor region provided on a side of the first surface via a wiring arranged in a through-hole,
• a width of the through-hole along the second surface is larger than a width of the light receiving element in a direction perpendicular to the first surface, and
• a height of each of the plurality of bump electrodes is larger than the width of the light receiving element in the direction perpendicular to the first surface.