Signal shielding for integrated circuits

A method of forming an integrated device, comprising:

• forming a first interconnect structure on a first substrate comprising a plurality of wires separated by a first dielectric layer;
• forming a plurality of conductive pads on the first dielectric layer in a plurality of rows extending in a first direction and a plurality of columns extending in a second direction perpendicular to the first direction;
• forming a plurality of dummy pads isolated from the first interconnect structure between the plurality of conductive pads;
• forming a first plurality of shield lines in the first dielectric layer extending between conductive pads of the plurality of conductive pads, wherein from a cross-sectional view along the first direction, a first conductive pad in a first row of the plurality of rows is separated from a second conductive pad in the first row by two shield lines of the first plurality of shield lines and a dummy pad of the plurality of dummy pads;
• forming a plurality of bond contacts in a second dielectric layer on a second substrate;
• and
• bonding the plurality of conductive pads to the plurality of bond contacts at a bonding interface.

A method of forming an integrated device, comprising:

• forming a plurality of photodetectors in a substrate;
• forming a plurality of floating diffusion nodes between the plurality of photodetectors in the substrate comprising a first floating diffusion node and a second floating diffusion node;
• forming an interconnect structure over the substrate and coupled to the plurality of floating diffusion nodes;
• forming a plurality of conductive pads coupled to the interconnect structure, wherein the plurality of conductive pads respectively lie within pixel blocks of a plurality of pixel blocks in a first pixel block row extending in a first direction, and wherein the plurality of conductive pads comprise a first conductive pad that is coupled to the first floating diffusion node and the second floating diffusion node by the interconnect structure;
• forming a plurality of dummy pads isolated from the interconnect structure between the plurality of conductive pads;
• forming a first plurality of shield lines concurrently with the plurality of conductive pads and extending between the pixel blocks in the first pixel block row;
• and
• bonding the plurality of conductive pads to a plurality of bond contacts on a second substrate, wherein from a cross-sectional view along the first direction, a first conductive pad in a first row of a plurality of rows is separated from a second conductive pad in the first row by two shield lines of the first plurality of shield lines and a dummy pad of the plurality of dummy pads.