H10F 30/2863
Field-effect phototransistors having pn homojunction gates
Official title: {Field-effect phototransistors having PN homojunction gates}
H10F30/2863 (Field-effect phototransistors having pn homojunction gates) appears on 77 US grants and 52 published applications in this corpus.
Search patents in H10F- Granted patents
- 77
- Published applications
- 52
- Assignees
- 51
- Inventors
- 159
- Latest grant
- 22 Jul 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 2 | 0 |
| 1986 | 5 | 0 |
| 1987 | 5 | 0 |
| 1988 | 3 | 0 |
| 1989 | 2 | 0 |
| 1990 | 2 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 2 | 0 |
| 1997 | 2 | 0 |
| 1998 | 4 | 0 |
| 1999 | 0 | 0 |
| 2000 | 3 | 0 |
| 2001 | 1 | 0 |
| 2002 | 0 | 1 |
| 2003 | 1 | 1 |
| 2004 | 1 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 3 |
| 2007 | 1 | 2 |
| 2008 | 2 | 1 |
| 2009 | 2 | 3 |
| 2010 | 0 | 1 |
| 2011 | 0 | 1 |
| 2012 | 2 | 0 |
| 2013 | 1 | 2 |
| 2014 | 2 | 2 |
| 2015 | 0 | 5 |
| 2016 | 3 | 2 |
| 2017 | 5 | 4 |
| 2018 | 1 | 1 |
| 2019 | 4 | 4 |
| 2020 | 5 | 6 |
| 2021 | 3 | 2 |
| 2022 | 1 | 2 |
| 2023 | 1 | 2 |
| 2024 | 1 | 5 |
| 2025 | 1 | 1 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Collision detector, collision detection system, and method of using same22 Jul 2025US 12,367,783 B2The Penn State Research Foundation
- Opto-electronic device and image sensor including the same2 Jan 2024US 11,862,743 B2Samsung Electronics Co., Ltd.
- Graphene-based photodetector24 Jan 2023US 11,563,190 B2Huawei Technologies Co., Ltd.
- Opto-electronic device having junction field-effect transistor structure and image sensor including the opto-electronic device12 Apr 2022US 11,302,740 B2Samsung Electronics Co., Ltd.
- MoS2 based photosensor for detecting both light wavelength and intensity1 Jun 2021US 11,022,486 B2National University of Singapore
- Photodetector, modulator, semiconductor device and semiconductor apparatus16 Jul 2026US 2026/0202691 A1Black Semiconductor GmbH
- Monolithic opto-mosfet relay and manufacturing method thereof27 Feb 2025US 2025/0072129 A1Taiwan-Asia Semiconductor Corporation
- Photodiodes26 Sep 2024US 2024/0322053 A1X-FAB Global Services GmbH
- Advanced UV Reference Photodiode26 Sep 2024US 2024/0322054 A1X-FAB Global Services GmbH
- Light Sensitive Semiconductor Structures26 Sep 2024US 2024/0322062 A1X-FAB Global Services GmbH
Most cited
By later US patents
- Light-responsive light-emitting diode display322US 4,329,625 AZaidan Hojin Handotai Kenkyu Shinkokai · 1982
- Multiple detecting apparatus for physical phenomenon and/or chemical phenomenon72US 6,294,133 B1Horiba, Ltd. · 2001
- Photoelectric converter61US 6,069,393 ACanon Kabushiki Kaisha · 2000
- Semiconductor image sensors38US 4,377,817 ASemiconductor Research Foundation · 1983
- Active pixel sensor with nanowire structured photodetectors36US 8,299,472 B22012