US 2025/0072129 A1Published application

Monolithic opto-mosfet relay and manufacturing method thereof

AssigneeTaiwan-Asia Semiconductor Corporation

InventorDi-Bao WANG

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Abstract

A monolithic Opto-MOSFET relay and manufacturing method thereof are provided. The manufacturing method of the monolithic Opto-MOSFET relay involves using a low ion doping concentration substrate. In this method, a first P-N junction structure, a second P-N junction structure, and an N-P-N junction structure are formed within an epitaxial layer. Dry etching is employed to divide the epitaxial layer into a high-voltage region and a low-voltage region, which are electrically isolated from the each other. Subsequently, an isolation layer is deposited on the epitaxial layer, and photomask etching is performed to generate multiple patterns. A metal layer is then deposited to form a light emitting diode (LED) based on the pattern within the first P-N junction structure, a photodiode within the second P-N junction structure, and at least one MOSFET within the N-P-N junction structure.

Claims20

Dependent claims

A monolithic optoelectronic metal oxide semiconductor field effect transistor (Opto-MOSFET) relay being connected to an input circuit and an output circuit, comprising:

a substrate;
an epitaxial layer formed on the substrate, a groove formed on the epitaxial layer to divide the epitaxial layer into a high voltage region and a low voltage region, the high voltage region and the low voltage region are electrically isolated from each other;
an isolation layer formed on the epitaxial layer;
a light emitting diode (LED) formed on the low voltage region of the epitaxial layer, being configured to receive an input signal from the input circuit and generate an emission light in response to the input signal;
a blue to ultraviolet light reflective film being configured to reflect the emission light and generate a reflection light;
a photodiode (PD) formed on the high voltage region of the epitaxial layer, being configured to generate a sensing voltage in response to sensing the reflection light;
a first MOSFET formed on the high voltage region of the epitaxial layer and electrically connected to the photodiode, being configured to generate a first output current to the output circuit after being driven by the sensing voltage;
and
a second MOSFET formed on the high voltage region of the epitaxial layer and electrically connected to the photodiode, being configured to generate a second output current to the output circuit after being driven by the sensing voltage;
wherein the LED, the PD, the first MOSFET and the second MOSFET are formed on the substrate.

7 more elements

Dependencies are inferred from the claim text.