Semiconductor image sensors
AssigneeSemiconductor Research Foundation
InventorsJun-ichi Nishizawa, Tadahiro Ohmi
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Abstract
This invention relates to a semiconductor image sensors and more particularly, to a back-illuminated-type static induction transistor image sensors. FIGS. 4A to 4C show the back illuminated type SIT image sensors operating in the electron depletion storing mode, where the n.sup.+ buried floating region 23 serves as storage region.
Claims10
A semiconductor image sensor including a multiplicity of photo-sensor elements disposed in a matrix of rows and columns in a semiconductor body having first and second principal surfaces, each photo-sensor element comprising:
- a transistor comprising a first current terminal region including a first low resistivity semiconductor region of a first conductivity type disposed in said first principal surface, a second current terminal region including a second low resistivity semiconductor region of said first conductivity type disposed in said semiconductor body below and separated away from said first current terminal region, a current path region including a first high resistivity semiconductor region disposed between said first and second current terminal region, and a control terminal region disposed adjacent to said current path region, said second current terminal region being electrically floated;
- a third low resistivity semiconductor region of said first conductivity type disposed in said second principal surface;
- and
- a photo-sensing semiconductor region disposed between said second and third low resistivity semiconductor regions.
A semiconductor image sensor including a multiplicity of photo-sensor elements disposed in a matrix of rows and columns in a semiconductor body having first and second principal surfaces, each photo-sensor element comprising:
- a transistor comprising a first current terminal region including a first two resistivity semiconductor region (25) of a first conductivity type disposed in said first principal surface, a second current terminal region comprising a second low resistivity semiconductor region (23) of said first conductivity type disposed in said semiconductor body below and separated away from said first current terminal region, a current path region including a first high resistivity semiconductor region (24) disposed between said first and second low resistivity semiconductor regions, and a control terminal region (26 or 31) disposed adjacent to said current path region, said second current terminal region being electrically floated;
- a third low resistivity semiconductor region (41) of a second conductivity type opposite to said first conductivity type disposed in said second principal surface;
- a transparent electrode (41') disposed on said third low resistivity region, and
- a photo-sensing high resistivity semiconductor region (22 or 32) disposed between said second and third low resistivity semiconductor regions.
Dependencies are inferred from the claim text.