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US 11,862,743 B2Granted
Opto-electronic device and image sensor including the same
AssigneeSamsung Electronics Co., Ltd.
InventorsChanwook Baik, Kyungsang Cho, Hojung Kim, Yooseong Yang
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Abstract
An opto-electronic device includes a base portion, a first electrode and a second electrode formed on an upper surface of the base portion apart from each other, a quantum dot layer, and a bank structure. The quantum dot layer is between the first electrode and the second electrode on the base portion and includes a plurality of quantum dots. The bank structure covers at least partial regions of the first electrode and the second electrode, defines a region where the quantum dot layer is formed, and is formed of an inorganic material.
Claims20
An opto-electronic device comprising:
- a base portion;
- a first electrode provided on an upper surface of the base portion;
- a second electrode provided on the upper surface of the base portion and spaced apart from the first electrode;
- a quantum dot layer provided between the first electrode and the second electrode on the base portion, the quantum dot layer comprising a plurality of quantum dots;
- and
- a bank structure covering at least a first partial region of the first electrode and at least a second partial region of the second electrode, the bank structure defining a region where the quantum dot layer is formed and comprising an inorganic material,
- wherein the first electrode and the second electrode each have a step structure such that a first upper surface thereof is higher than a second upper surface thereof, and
- wherein a lateral distance from the first upper surface to the quantum dot layer is greater than a lateral distance from the second upper surface to the quantum dot layer.
5 more elements
Dependencies are inferred from the claim text.