H10F 30/2255
In which the active layers form heterostructures
Official title: {in which the active layers form heterostructures, e.g. SAM structures}
H10F30/2255 (In which the active layers form heterostructures) appears on 469 US grants and 462 published applications in this corpus.
Search patents in H10F- Granted patents
- 469
- Published applications
- 462
- Assignees
- 203
- Inventors
- 838
- Latest grant
- 18 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 4 | 0 |
| 1981 | 2 | 0 |
| 1982 | 0 | 0 |
| 1983 | 3 | 0 |
| 1984 | 5 | 0 |
| 1985 | 3 | 0 |
| 1986 | 4 | 0 |
| 1987 | 5 | 0 |
| 1988 | 9 | 0 |
| 1989 | 7 | 0 |
| 1990 | 6 | 0 |
| 1991 | 6 | 0 |
| 1992 | 4 | 0 |
| 1993 | 6 | 0 |
| 1994 | 6 | 0 |
| 1995 | 5 | 0 |
| 1996 | 4 | 0 |
| 1997 | 7 | 0 |
| 1998 | 5 | 0 |
| 1999 | 7 | 0 |
| 2000 | 6 | 0 |
| 2001 | 1 | 1 |
| 2002 | 9 | 10 |
| 2003 | 3 | 5 |
| 2004 | 6 | 12 |
| 2005 | 6 | 8 |
| 2006 | 6 | 10 |
| 2007 | 6 | 10 |
| 2008 | 10 | 10 |
| 2009 | 7 | 7 |
| 2010 | 7 | 8 |
| 2011 | 8 | 10 |
| 2012 | 4 | 5 |
| 2013 | 4 | 9 |
| 2014 | 17 | 16 |
| 2015 | 11 | 17 |
| 2016 | 18 | 20 |
| 2017 | 25 | 21 |
| 2018 | 15 | 17 |
| 2019 | 19 | 33 |
| 2020 | 33 | 26 |
| 2021 | 21 | 39 |
| 2022 | 26 | 50 |
| 2023 | 34 | 39 |
| 2024 | 28 | 31 |
| 2025 | 26 | 35 |
| 2026 | 15 | 13 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Geiger-mode avalanche photodiode arrays fabricated on silicon-on-insulator substrates30 Jun 2026US 12,672,382 B2Massachusetts Institute of Technology
- APD, APD fabrication method, detector, and laser radar system9 Jun 2026US 12,652,866 B2Huawei Technologies Co., Ltd.
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- Mwir barrier photodetector in which the absorbing zone comprises a stack of a bulk part and a superlattice16 Jul 2026US 2026/0206334 A1Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Mid-infrared avalanche photodiodes with low dark currents2 Jul 2026US 2026/0190508 A1University of Virginia Patent Foundation
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Most cited
By later US patents
- Germanium silicon heterostructure photodetectors134US 7,397,101 B1Luxtera, Inc. · 2008
- Avalanche photodiode126US 9,041,136 B2Agency for Science, Technology and Research · 2015
- Light-sensing device94US 7,521,737 B2Quantum Semiconductor LLC · 2009
- Apparatus comprising a single photon photodetector having reduced afterpulsing and method therefor88US 7,902,570 B2Princeton Lightwave, Inc. · 2011
- Semiconductor hetero-interface photodetector71US 6,074,892 ACiena Corporation · 2000