Mid-infrared avalanche photodiodes with low dark currents
AssigneeUniversity of Virginia Patent Foundation
InventorsAndrew H. Jones, Joe C. Campbell
Life of this patent
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Abstract
Avalanche photodiode designs having separate absorption and multiplication regions are disclosed. The avalanche photodiode designs include a charge layer tailored to allow charge carrier transport from the absorption layer to the multiplication layer and reduce the dark current when the avalanche photodiode is reverse biased.
Claims20
An avalanche photodiode (APD) configured to allow generation and amplification of a photocurrent upon receiving light while limiting the generation of a dark current, wherein light comprises incident photons having wavelengths within an operating wavelength range of the APD, the APD comprising:
- an absorption layer configured to absorb the incident photons, the absorption layer comprising a semiconductor material having a composition comprising AzB1-z;
- a multiplication layer configured to allow multiplication of charge carriers generated in the absorption layer;
- and
- a charge layer extended from the multiplication layer to the absorption layer, wherein the charge layer comprises:
- a first interfacial charge sublayer adjacent to the absorption layer, the first interfacial charge sublayer having a first thickness and comprising a semiconductor material having a composition comprising AwB1-w;
- and
- an intermediate charge sublayer adjacent to the first interfacial charge sublayer opposite to the absorption layer, the intermediate charge sublayer having a second thickness and comprising a semiconductor material having a composition comprising AyB1-y,
- wherein the absolute value of difference between w and z is greater than 0.1.
Dependencies are inferred from the claim text.