Avalanche photodiode
AssigneeAgency for Science, Technology and Research
InventorChing Kean Chia
Life of this patent
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Abstract
According to one aspect, there is provided an avalanche photodiode comprising a first semiconductor layer that absorbs photons of a first wavelength range and having a first energy bandgap; a second semiconductor layer that absorbs photons of a second wavelength range and having a second energy bandgap, the second energy bandgap being different from the first energy bandgap; and a control layer between the first semiconductor layer and the second semiconductor layer, the control layer having a third energy bandgap engineered to suppress carriers created from dark current.
Claims14
An avalanche photodiode comprising
- a first semiconductor layer that absorbs photons of a first wavelength range and having a first energy bandgap;
- a second semiconductor layer that absorbs photons of a second wavelength range and having a second energy bandgap, the second energy bandgap being different from the first energy bandgap;
- and
- a control layer between the first semiconductor layer and the second semiconductor layer, the control layer having a third energy bandgap engineered to suppress carriers created from dark current and to allow for a photocurrent with a substantially vertical profile near the breakdown voltage of the avalanche photodiode.
Dependencies are inferred from the claim text.