Mwir barrier photodetector in which the absorbing zone comprises a stack of a bulk part and a superlattice

An infrared barrier photodetector, configured to detect a light radiation of interest having a central wavelength between 3 and 5 μm, comprising

• a semiconductor barrier structure based on III-Sb, resting on a support substrate based on III-Sb, the semiconductor barrier being formed of:
• an absorbing zone, configured to absorb the light radiation of interest;
• a barrier layer;
• and
• a contact layer,
• wherein the absorbing zone is formed of a two-part stack comprising:
• a first absorbing part, doped according to a first conductivity type, made of a bulk material based on InAsSb, located on the support substrate side;
• and
• a second absorbing part, doped according to the first conductivity type, and formed of a superlattice, located between the first absorbing part and the barrier layer.