H10D 64/01356
The insulator being formed after the semiconductor body, the semiconductor being a
Official title: {the insulator being formed after the semiconductor body, the semiconductor being a Group IV material and not being silicon, e.g. Ge, SiGe or SiGeC (H10D64/01364, H10D64/01366 take precedence)}
H10D64/01356 (The insulator being formed after the semiconductor body, the semiconductor being a) appears on 279 US grants and 313 published applications in this corpus.
Search patents in H10D- Granted patents
- 279
- Published applications
- 313
- Assignees
- 93
- Inventors
- 570
- Latest grant
- 26 Aug 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1997 | 1 | 0 |
| 1998 | 3 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 2 | 1 |
| 2002 | 3 | 0 |
| 2003 | 3 | 1 |
| 2004 | 3 | 6 |
| 2005 | 3 | 9 |
| 2006 | 5 | 11 |
| 2007 | 4 | 10 |
| 2008 | 3 | 8 |
| 2009 | 9 | 6 |
| 2010 | 12 | 13 |
| 2011 | 4 | 9 |
| 2012 | 9 | 16 |
| 2013 | 10 | 13 |
| 2014 | 25 | 38 |
| 2015 | 29 | 28 |
| 2016 | 30 | 22 |
| 2017 | 19 | 24 |
| 2018 | 24 | 25 |
| 2019 | 19 | 14 |
| 2020 | 21 | 19 |
| 2021 | 8 | 8 |
| 2022 | 10 | 10 |
| 2023 | 6 | 5 |
| 2024 | 8 | 10 |
| 2025 | 6 | 5 |
| 2026 | 0 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor structure26 Aug 2025US 12,402,394 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor devices with metal intercalated high-k capping27 May 2025US 12,315,730 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and manufacturing method thereof20 May 2025US 12,308,371 B2National Taiwan University
- Semiconductor structure8 Apr 2025US 12,272,755 B2Mediatek Inc.
- Self-aligned contacts1 Apr 2025US 12,266,571 B2Intel Corporation
- Gate-all-around device and method of forming same12 Feb 2026US 2026/0047120 A1Tokyo Electron Limited
- Method for manufacturing semiconductor device12 Feb 2026US 2026/0047359 A1Kabushiki Kaisha Toshiba
- Semiconductor structure16 Oct 2025US 2025/0324733 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor devices with metal intercalated high-k capping18 Sep 2025US 2025/0293031 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Self-aligned contacts24 Jul 2025US 2025/0239486 A1Intel Corporation
Most cited
By later US patents
- Method of manufacturing a substrate using an SiGe layer600US 6,607,948 B1Kabushiki Kaisha Toshiba · 2003
- Self-aligned contacts134US 8,436,404 B2Intel Corporation · 2013
- Cyclic thermal anneal for dislocation reduction119US 6,635,110 B1Massachusetts Institute of Technology · 2003
- Method for making a semiconductor device comprising a lattice matching layer118US 7,700,447 B2Mears Technologies, Inc. · 2010
- Semiconductor device comprising a lattice matching layer115US 7,718,996 B2Mears Technologies, Inc. · 2010