H03K 19/09487
Using only depletion transistors
Official title: {using only depletion transistors}
H03K19/09487 (Using only depletion transistors) appears on 7 US grants and 4 published applications in this corpus.
Search patents in H03K- Granted patents
- 7
- Published applications
- 4
- Assignees
- 4
- Inventors
- 8
- Latest grant
- 18 Sep 2018
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1985 | 2 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 1 |
| 2009 | 0 | 0 |
| 2010 | 1 | 0 |
| 2011 | 0 | 1 |
| 2012 | 1 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 1 |
| 2016 | 1 | 0 |
| 2017 | 1 | 1 |
| 2018 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Semiconductor structure with back-gate switching18 Sep 2018US 10,079,605 B2Globalfoundries Inc.
- Semiconductor structure with back-gate switching12 Sep 2017US 9,762,245 B1Globalfoundries Inc.
- Buffer circuit with reduced static leakage through controlled body biasing in FDSOI technology16 Feb 2016US 9,264,045 B2STMicroelectronics International N. V.
- Depletion-mode MOSFET circuit and applications14 Feb 2012US 8,116,120 B2
- Depletion-mode MOSFET circuit and applications19 Oct 2010US 7,817,459 B2Keystone Semiconductor Corp.
- Semiconductor structure with back-gate switching14 Dec 2017US 2017/0359070 A1Globalfoundries Inc.
- Buffer circuit with reduced static leakage through controlled body biasing in fdsoi technology1 Oct 2015US 2015/0280716 A1STMicroelectronics International N. V.
- Depletion-Mode MOSFET Circuit and Applications1 Dec 2011US 2011/0291195 A1
- Depletion-mode mosfet circuit and applications24 Jul 2008US 2008/0175045 A1Keystone Semiconductor Corp.
Most cited
By later US patents
- Semiconductor device having contacting but electrically isolated regions of opposite conductivity types4US 4,547,681 ATokyo Shibaura Denki Kabushiki Kaisha · 1985
- Semiconductor device having contacting but electrically isolated regions of opposite conductivity types3US 4,547,790 ATokyo Shibaura Denki Kabushiki Kaisha · 1985
- Depletion-mode MOSFET circuit and applications3US 7,817,459 B2Keystone Semiconductor Corp. · 2010
- Depletion-mode MOSFET circuit and applications3US 8,116,120 B22012
- Semiconductor structure with back-gate switching3US 9,762,245 B1Globalfoundries Inc. · 2017