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US 10,079,605 B2Granted
Semiconductor structure with back-gate switching
AssigneeGlobalfoundries Inc.
InventorsMichael Otto, Nigel Chan
Life of this patent
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to circuits with logical back-gate switching and methods of operation. The circuit includes at least one front-gate contact and digital back-gate potentials for logical function implementation on a back side of at least one device. The digital back-gate potentials are switchable between two logic levels.
Claims16
A circuit, comprising:
- a first device which is functional up to a 9V back-gate bias and having a front-gate control and a logic back-gate control connecting to a contact and structured to provide logical function to the first device;
- and
- a second device which is functional up to a 9V back-gate bias and having a front-gate control input and a logic back-gate control connecting to the contact and structured to provide logical function to the second device,
- wherein the first device is a PFET-SOI device and the second device is an NFET-SOI device,
- the second device is turned “ON” at a third back-gate bias and turned “OFF” at a fourth back-gate bias comprising a negative voltage, and
- the third back-gate bias is higher than the fourth back-gate bias.
3 more elements
Dependencies are inferred from the claim text.