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US 2017/0359070 A1Published application
Semiconductor structure with back-gate switching
AssigneeGlobalfoundries Inc.
InventorsMichael OTTO, Nigel CHAN
Life of this patent
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to circuits with logical back-gate switching and methods of operation. The circuit includes at least one front-gate contact and digital back-gate potentials for logical function implementation on a back side of at least one device. The digital back-gate potentials are switchable between two logic levels.
Claims14
A circuit, comprising:
- a first device which is functional up to a 9V back-gate bias and having a front-gate control and a logic back-gate control connecting to a contact and structured to provide logical function to the first device;
- and
- a second device having a front-gate control input and a logic back-gate control connecting to the contact and structured to provide logical function to the second device.
Dependencies are inferred from the claim text.