H01S 5/3059
In ii-vi materials
Official title: {in II-VI materials}
H01S5/3059 (In ii-vi materials) appears on 32 US grants and 8 published applications in this corpus.
Search patents in H01S- Granted patents
- 32
- Published applications
- 8
- Assignees
- 19
- Inventors
- 65
- Latest grant
- 17 Jan 2023
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 2 | 0 |
| 1992 | 0 | 0 |
| 1993 | 4 | 0 |
| 1994 | 3 | 0 |
| 1995 | 3 | 0 |
| 1996 | 4 | 0 |
| 1997 | 1 | 0 |
| 1998 | 3 | 0 |
| 1999 | 1 | 0 |
| 2000 | 2 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 1 |
| 2003 | 0 | 0 |
| 2004 | 1 | 1 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 1 | 0 |
| 2008 | 0 | 1 |
| 2009 | 0 | 1 |
| 2010 | 0 | 0 |
| 2011 | 2 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 0 |
| 2016 | 0 | 0 |
| 2017 | 1 | 1 |
| 2018 | 0 | 0 |
| 2019 | 0 | 0 |
| 2020 | 1 | 2 |
| 2021 | 1 | 1 |
| 2022 | 0 | 0 |
| 2023 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Diffusion blocking layer for a compound semiconductor structure17 Jan 2023US 11,557,880 B2
- Plasmonic laser6 Jul 2021US 11,056,856 B2International Business Machines Corporation
- Diffusion blocking layer for a compound semiconductor structure10 Nov 2020US 10,833,480 B2Skorpios Technologies, Inc.
- Waveguide embedded plasmon laser with multiplexing and electrical modulation29 Aug 2017US 9,748,736 B1The Regents of the University of California
- Semiconductor device1 Nov 2011US 8,050,305 B2Hitachi, Ltd.
- Diffusion blocking layer for a compound semiconductor structure17 Jun 2021US 2021/0184435 A1Skorpios Technologies, Inc.
- Plasmonic laser13 Aug 2020US 2020/0259312 A1International Business Machines Corporation
- Diffusion blocking layer for a compound semiconductor structure28 May 2020US 2020/0169063 A1Skorpios Technologies, Inc.
- Waveguide embedded plasmon laser with multiplexing and electrical modulation10 Aug 2017US 2017/0229843 A1The Regents of the University of California
- El semiconductor device5 Mar 2009US 2009/0059985 A1Hitachi, Ltd.
Most cited
By later US patents
- Bipolar transistor with monoatomic base layer between emitter and collector layers105US 5,373,186 AMAX-PLANCK-GESELLSCHAFT zur FOERDERUNG der WISSENSCHAFTEN.e.V · 1994
- Semiconductor devices with at least one monoatomic layer of doping atoms92US 4,882,609 AMax-Planck-Gesellschaft zur Forderung der Wissenschafter e.V. · 1989
- Photoelectric conversion functional element and production method thereof80US 6,791,257 B1Japan Energy Corporation · 2004
- Quaternary II-VI materials for photonics46US 5,045,897 ASanta Barbara Research Center · 1991
- Blue-green laser diode43US 5,291,507 AMinnesota Mining and Manufacturing Company · 1994