Photoelectric conversion functional element and production method thereof

A method for producing an electro luminescence device, comprising the steps of:

• providing a compound semiconductor crystal substrate comprising a Group 12 (2B) element and a Group 16 (6B) element in a periodic table;
• disposing a diffusion source on a front surface of the substrate, the diffusion source including an element converting the substrate of a p or n conductor into the opposite n or p conductor;
• forming a pn junction by heat treating and thermally diffusing the diffusion source;
• and
• forming electrodes on front and rear of the substrate;
• wherein the diffusion source is disposed on a substrate plane having plane orientation from which a flat plane is obtained after etching, and wherein before the diffusion source is disposed, the front surface of the substrate is chemically etched.

A method for producing an electro luminescence device, comprising the steps of:

• providing a compound semiconductor crystal substrate comprising a Group 12 (2B) element and a Group 16 (6B) element in a periodic table;
• disposing a diffusion source on a front surface of the substrate, the diffusion source including an element converting the substrate of a p or n conductor into the opposite n or p conductor;
• forming a pn junction by heat treating and thermally diffusing the diffusion source;
• and
• forming electrodes on front and rear of the substrate;
• wherein a film thickness of the diffusion source is from 5 nm to 50 nm.

An electro luminescence device comprising a compound semiconductor crystal substrate comprising a Group 12 (2B) element and a Group 16 (6B) element in a periodic table,

• wherein the electro luminescence device is produced by disposing a diffusion source including an element converting the substrate of a p or n conductor into the opposite n or p conductor on a front surface of the substrate;
• forming a pn junction by heat treating and thermally diffusing the diffusion source;
• forming electrodes on both surfaces of the substrate;
• and etching the front surface of the substrate before depositing the diffusion source;
• and wherein
• the compound semiconductor crystal substrate has carrier density of from 1×1017 cm−3 to 5×1018 cm−3.

An electro luminescence device comprising a compound semiconductor crystal substrate comprising a Group 12 (2B) element and a Group 16 (6B) element in a periodic table,

• wherein the electro luminescence device is produced by disposing a diffusion source including an element converting the substrate of a p or n conductor into the opposite n or p conductor on a front surface of the substrate;
• forming a pn junction by heat treating and diffusing the diffusion source;
• and forming electrodes on both surfaces of the substrate, and
• a depth of the diffusion is not less than 0.3 μm and not more than 2.0 μm from the front surface of the substrate.