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US 10,833,480 B2Granted
Diffusion blocking layer for a compound semiconductor structure
AssigneeSkorpios Technologies, Inc.
InventorsJohn Y. Spann, John Zyskind
Life of this patent
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Abstract
A method of fabricating a gain medium includes growing a p-type layer doped with zinc on a substrate, growing an undoped layer including one or both of InP or InGaAsP on the p-type layer, growing a region that includes multiple quantum wells (MQWs) on the undoped layer, and growing an n-type layer on the region. The undoped layer has a thickness that is sufficient to prevent Zn diffusion from the p-type layer into the region during subsequent growth or wafer fabrication steps.
Claims20
A gain medium, comprising:
- a p-type layer that defines a first surface and an opposing second surface, the p-type layer being doped using zinc;
- an undoped layer that defines a first surface and an opposing second surface that are separated by a thickness of the undoped layer, the thickness being within a thickness range of 5 nm to 500 nm, the first surface of the undoped layer adjoining the second surface of the p-type layer;
- a region that includes multiple quantum wells (MQWs), wherein the region defines a first surface and an opposing second surface that are separated by a thickness of the region, and a first surface of the region adjoins the second surface of the undoped layer;
- and
- an n-type layer that defines a first surface and a second surface that are separated by a thickness of the n-type layer, the first surface of the n-type layer adjoining the second surface of the region;
- wherein:
- the p-type layer, the undoped layer, the region and the n-type layer are formed of one or more compound semiconductor materials that are characterized by epitaxially compatible crystalline lattice structures;
- and
- the p-type layer, the undoped layer, the region and the n-type layer form a single crystalline structure that extends continuously from the p-type layer through the n-type layer.
6 more elements
A method of fabricating a gain medium, comprising:
- growing a p-type layer doped with zinc on a substrate;
- growing an undoped layer comprising one or more of InP, InGaAsP, InGaAlAs, or InGaAlAsP on the p-type layer;
- growing a region that includes multiple quantum wells (MQWs) on the undoped layer;
- and
- growing an n-type layer on the region;
- wherein growing the undoped layer comprises growing the undoped layer to a thickness that is sufficient to prevent Zn diffusion from the p-type layer into the region during subsequent growth or wafer fabrication steps.
3 more elements
A compound semiconductor layer stack, comprising:
- one or more p-type layers, formed of crystalline, compound semiconductor material grown on a crystalline substrate, wherein at least one of the one or more p-type layers comprises Zn as a dopant;
- an undoped layer, formed of crystalline, compound semiconductor material grown on the one or more p-type layers;
- and
- one or more n-type layers, formed of crystalline, compound semiconductor material grown on the undoped layer;
- wherein the undoped layer comprises InP, InGaAsP, InGaAlAs, or InGaAlAsP, and is of sufficient thickness to reduce zinc diffusion from the p-type layer toward the n-type layers during growth of the one or more n-type layers.
2 more elements
Dependencies are inferred from the claim text.