Diffusion blocking layer for a compound semiconductor structure
OwnerJohn Y. Spann, John Zyskindinventors
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Abstract
A method of fabricating a gain medium includes growing a p-type layer doped with zinc on a substrate, growing an undoped layer including one or both of InP or InGaAsP on the p-type layer, growing a region that includes multiple quantum wells (MQWs) on the undoped layer, and growing an n-type layer on the region. The undoped layer has a thickness that is sufficient to prevent Zn diffusion from the p-type layer into the region during subsequent growth or wafer fabrication steps.
Claims20
A compound semiconductor structure, comprising:
- a substrate;
- a p-type layer of compound semiconductor material;
- an undoped layer of compound semiconductor material that defines a first surface and an opposing second surface that are separated by a thickness of the undoped layer, the thickness being within a thickness range of 5 nm to 500 nm;
- a region of compound semiconductor material that includes multiple quantum wells (MQWs);
- and
- an n-type layer of compound semiconductor material;
- wherein
- the p-type layer, the undoped layer, the region, and the n-type layer exist in sequence above the substrate, to form a single crystalline structure that extends continuously from the substrate through the n-type layer.
A method of fabricating a compound semiconductor structure, comprising:
- growing a p-type layer on a substrate;
- growing an undoped layer comprising one or more of InP, InGaAsP, InGaAlAs, or InGaAlAsP;
- growing a region that includes multiple quantum wells (MQWs);
- and
- growing an n-type layer;
- wherein growing the undoped layer comprises growing the undoped layer to a thickness that is sufficient to prevent dopant diffusion from the p-type layer into the region during subsequent growth or wafer fabrication steps.
A compound semiconductor layer stack, comprising:
- one or more p-type layers, formed of crystalline, compound semiconductor material grown on a crystalline substrate;
- an undoped layer, formed of crystalline, compound semiconductor material;
- and
- one or more n-type layers, formed of crystalline, compound semiconductor material;
- wherein the undoped layer comprises InP, InGaAsP, InGaAlAs, or InGaAlAsP, and is of sufficient thickness to reduce zinc diffusion from the p-type layer toward the n-type layers during subsequent growth or wafer fabrication steps.
Dependencies are inferred from the claim text.